UNISONIC TECHNOLOGIES CO., LTD 7NM60 Power MOSFET 7.4A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM60 is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 7NM60 Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications. FEATURES * RDS(ON) < 0.95Ω @ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 7NM60L-TF1-T 7NM60G-TF1-T TO-220F1 7NM60L-TM3-T 7NM60G-TM3-T TO-251 7NM60L-TN3-R 7NM60G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 1 of 7 QW-R209-044.C 7NM60 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-044.C 7NM60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous ID 7.4 A Drain Current Pulsed (Note 2) IDM 29.6 A Avalanche Current (Note 2) IAR 2 A Single Pulsed (Note 3) EAS 65 mJ Avalanche Energy 0.1 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 3.7 V/ns TO-220F1 48 W Power Dissipation TO-251/TO-252 60 W PD TO-220F1 0.38 W/°C Derate above 25°C 0.48 W/°C TO-251/TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=32.5mH, IAS=2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220F1 Junction to Ambient TO-251/TO-252 TO-220F1 Junction to Case TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 110 2.6 2.08 UNIT °С/W °С/W °С/W °С/W 3 of 7 QW-R209-044.C 7NM60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate- Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, IG=100μA Gate-Source Charge QGS VGS=10V (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=30V, ID=0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS=0V, IS=7.4A Body Diode Reverse Recovery Time trr VGS=0V, IS=7.4A dI/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 V 1 μA 100 nA -100 nA 0.67 V/°C 2.5 4.5 0.95 V Ω 300 120 13 pF pF pF 19 5 5.5 60 100 140 70 nC nC nC ns ns ns ns 320 3.2 7.4 A 29.6 A 1.4 V nS nC 4 of 7 QW-R209-044.C 7NM60 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-044.C 7NM60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-044.C 7NM60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-044.C