Datasheet

UNISONIC TECHNOLOGIES CO., LTD
5NM70
Power MOSFET
5.0A, 700V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 5NM70 is an Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications at power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 1.3Ω @ VGS =10V, ID = 2.5 A
* Fast Switching Capability
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5NM70L-TF1-T
5NM70G-TF1-T
5NM70L-TM3-T
5NM70G-TM3-T
5NM70L-TMS-T
5NM70G-TMS-T
5NM70L-TMS2-T
5NM70G-TMS2-T
5NM70L-TMN2-T
5NM70G-TMN2-T
5NM70L-TN3-R
5NM70G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220F1
TO-251
TO-251S
TO-251S2
TO-251NS2
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R209-127.E
5NM70

Power MOSFET
MARKING
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5NM70

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
5
A
Pulsed Drain Current (Note 2)
IDM
20
A
Avalanche Current (Note 2)
IAR
1.9
A
Single Pulsed (Note 3)
EAS
60
mJ
Avalanche Energy
0.2
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
TO-220F1
36
W
Power Dissipation
TO-251/TO-251S
(TC=25°C)
TO-251S2/TO-251NS2
54
W
TO-252
PD
TO-220F1
0.288
W/°C
TO-251/TO-251S
Derate above 25°C
TO-251S2/TO-251NS2
0.432
W/°C
TO-252
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=33mH, IAS=1.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤5.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220F1
TO-251/TO-251S
Junction to Ambient
TO-251S2/TO-251NS2
TO-252
TO-220F1
TO-251/TO-251S
Junction to Case
TO-251S2/TO-251NS2
TO-252
SYMBOL
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θJA
θJC
RATINGS
62.5
UNIT
°С/W
110
°С/W
3.47
°С/W
2.3
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS=0V, ID=250μA
VDS=700V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
MIN TYP MAX UNIT
700
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.5
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A ,
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=5A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=5A, VGS=0V,
dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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1
100
-100
4.5
1.3
V
μA
nA
V
Ω
330
215
20
pF
pF
pF
50
4
11
36
65
140
45
nC
nC
nC
ns
ns
ns
ns
5
20
1.4
290
2.5
A
A
V
ns
µC
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TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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