UNISONIC TECHNOLOGIES CO., LTD 4NM70-SHA Preliminary Power MOSFET 4.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 4NM70-SHA is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.6Ω @ VGS = 10 V, ID = 2.0 A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4NM70L-TA3-T 4NM70G-TA3-T 4NM70L-TF3-T 4NM70G-TF3-T 4NM70L-TF1-T 4NM70G-TF1-T 4NM70L-TF2-T 4NM70G-TF2-T 4NM70L-TM3-R 4NM70G-TM3-R 4NM70L-TN3-R 4NM70G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R209-130.a 4NM70-SHA Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-130.a 4NM70-SHA Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.0 A Continuous ID 4.0 A Drain Current 16 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 80 mJ Avalanche Energy 0.3 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/ TO-251 38 W TO-252 PD Power Dissipation TO-220F/TO-220F1 55 W TO-220F2 TO-220/ TO-251 0.304 W/°С TO-252 PD Derate above 25°C TO-220F/TO-220F1 0.44 W/°С TO-220F2 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 159mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤ 4.0A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220/ TO-251 TO-252 Junction to Case TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATING 62.5 UNIT °C/W 110 3.28 θJC °C/W 2.27 3 of 7 QW-R209-130.a 4NM70-SHA Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 700 V VDS = 700 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current IGSS -100 Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C 0.6 V/°С ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.5 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.0 A 1.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 250 pF VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS 160 pF 5 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 38 nC VDS=50V, VGS=10V, ID=1.3A, Gate-Source Charge QGS 4 nC ID=100µA (Note 1, 2) 8 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 40 ns Turn-On Rise Time tR 55 ns VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 92 ns Turn-Off Fall Time tF 39 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS 4 A Forward Current Maximum Pulsed Drain-Source Diode ISM 16 A Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.0 A 1.4 V Reverse Recovery Time trr 270 ns VGS = 0 V, IS = 4.0 A dI/dt = 100 A/μs (Note 1) 2.0 μC Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R209-130.a 4NM70-SHA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-130.a 4NM70-SHA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R209-130.a 4NM70-SHA Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-130.a