UNISONIC TECHNOLOGIES CO., LTD 4NM65-SHA Preliminary Power MOSFET 4.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 4NM65-SHA is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 4NM65-SHA Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications. FEATURES * RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4NM65L-TA3-T 4NM65G-TA3-T 4NM65L-TF3-T 4NM65G-TF3-T 4NM65L-TF1-T 4NM65G-TF1-T 4NM65L-TF2-T 4NM65G-TF2-T 4NM65L-TM3-R 4NM65G-TM3-R 4NM65L-TN3-R 4NM65G-TN3-R Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R209-123.b 4NM65-SHA Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-123.b 4NM65-SHA Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note2) IDM 16 A Avalanche Energy Single Pulsed (Note3) EAS 155 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 4.83 V/ns TO-220 106 W TO-220F 34 W Power Dissipation PD TO-220F1/TO-220F2 36 W TO-251TO-252 50 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=159mH, IAS=1.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤4.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS UNIT 62.5 °C/W 110 1.18 3.67 3.47 2.5 °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R209-123.b 4NM65-SHA Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0 V, ID = 250μA 650 VDS = 650 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ID=250μA, Referenced to 25°C Forward IGSS Reverse Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 0.5A, Turn-On Rise Time tR RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 50V,ID= 1.3A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Drain-Source Diode Forward IS Current Pulsed Drain-Source Diode Forward ISM Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =4.0A Body Diode Reverse Recovery Time trr VGS=0V, IS=10A dIF/dt=100A/μs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature Gate-Source Leakage Current UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.6 2.5 V 10 μA 100 nA -100 nA V/°С 4.5 1.5 V Ω 250 177 19 pF pF pF 54 50 114 37 55 3.8 9.2 ns ns ns ns nC nC nC 244 1915 4.0 A 16 A 1.4 V ns nC 4 of 7 QW-R209-123.b 4NM65-SHA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-123.b 4NM65-SHA Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-123.b 4NM65-SHA Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-123.b