IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, with Internal RBE (Single, Dual, Quad Channel) FEATURES Single Channel A 1 6 B C 2 5 C NC 3 4 E A 1 8 E • Standard DIP packages C 2 7 C C 3 6 C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 A 4 5 E A 1 16 E • Internal RBE for high stability • Four available CTR categories per package type • BVCEO > 60 V Dual Channel DESCRIPTION IL66, ILD66, and ILQ66 are optically coupled isolators employing gallium arsenide infrared emitters and silicon photodarlington detectors. Switching can be accomplished while maintaining a high degree of isolation between driving and load circuits, with no crosstalk between channels. C 2 15 C C 3 14 C A 4 13 E A 5 12 E AGENCY APPROVALS C 6 11 C • UL1577, file no. E52744 system code H, double protection C 7 10 C A 8 9 E Quad Channel • cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-5 (VDE 0884) available with option 1 • BSI IEC 60950, IEC 60065 i179015-4 ORDERING INFORMATION I L x 6 6 - PART NUMBER # X CTR BIN 0 # # PACKAGE OPTION TAPE AND REEL x = D (Dual) or Q (Quad) DIP-# Option 6 7.62 mm 10.16 mm T Option 7 > 0.1 mm > 0.7 mm SINGLE CHANNEL DUAL CHANNEL AGENCY CERTIFIED/ PACKAGE Option 9 QUAD CHANNEL CTR (%) 2 mA UL, cUL, BSI ≥ 100 ≥ 300 DIP-6 IL66-1 IL66-2 DIP-8 - - 0.7 mA 2 mA ≥ 500 ≥ 100 ≥ 300 ≥ 400 ≥ 500 - - - - - - ILD66-2 ILD66-4 - - - - ≥ 300 SMD-8, option 7 - - - ILD66-4X007T - - - SMD-8, option 9 - - - ILD66-4X009 - - - - DIP-16 - - - - ILQ66-1 ILQ66-2 ILQ66-3 ILQ66-4 SMD-16, option 7 - - - - - - - ILQ66-4X007T SMD-16, option 9 - - - - - - - ILQ66-4X009T ≥ 100 ≥ 300 ≥ 300 ≥ 500 ≥ 100 ≥ 300 ≥ 400 ≥ 500 VDE, UL, cUL, BSI DIP-6, 400 mil, option 6 IL66-1X016 DIP-16 ILQ66-4X001 Note • Additional optiony may be possible, please contact sales office. Rev. 1.8, 22-Aug-12 Document Number: 83638 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT VRM 6.0 V IF 60 mA INPUT Peak reverse voltage Forward continuous current Power dissipation Pdiss Derate linearly from 25 °C 100 mW 1.33 mW/°C OUTPUT Power dissipation Pdiss Derate from 25 °C 150 mW 2.0 mW/°C COUPLER Isolation test voltage t = 1.0 s Total package power dissipation VISO 5300 VRMS IL66 Ptot 250 mW ILD66 Ptot 400 mW ILQ66 Ptot 500 mW 3.3 mW/°C IL66 Derate linearly from 25 °C ILD66 5.33 mW/°C ILQ66 6.67 mW/°C ≥ 7.0 mm ≥ 7.0 mm Creepage distance Clearance distance Comparative tracking index CTI 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg - 55 to + 125 °C Operating temperature Tamb - 55 to + 100 °C 10 s Isolation resistance Lead soldering time at 260 °C Ω Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 20 mA Reverse current VR = 6.0 V VR = 0 V MIN. TYP. MAX. UNIT VF 1.25 1.5 V IR 0.1 10 μA CO 25 INPUT Capacitance pF OUTPUT Collector emitter breakdown voltage Collector base breakdown voltage (IL66) Collector emitter leakage current Capacitance collector emitter IC = 1.0 mA, IF = 0 A BVCEO 60 IC = 10 μA BVCBO 60 VCE = 50 V, IF = 0 A ICEO VCE = 10 V V V 1.0 100 3.4 nA pF COUPLER Saturation voltage, collector emitter IC = 10 mA, IF = 10 mA VCEsat 0.9 1.0 V Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.8, 22-Aug-12 Document Number: 83638 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 2.0 mA, VCE = 10 V Current transfer ratio PART SYMBOL MIN. TYP. IL(D,Q)66-1 CTR 100 400 MAX. UNIT % IL(D,Q)66-2 CTR 300 500 % IF = 0.7 mA, VCE = 10 V IL(D,Q)66-3 CTR 400 500 % IF = 2.0 mA, VCE = 5.0 V IL(D,Q)66-4 CTR 500 750 % SWITCHING CHARACTERSITICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Rise time -1, -2, -4 VCC = 10 V, IF = 2.0 mA, RL = 100 Ω Fall time -1, -2, -4 VCC = 10 V, IF = 2.0 mA, RL = 100 Ω Rise time -3 Fall time -3 MIN. TYP. MAX. UNIT tr 200 μs tf 200 μs VCC = 10 V, IF = 0.7 mA, RL = 100 Ω tr 200 μs VCC = 10 V, IF = 0.7 mA, RL = 100 Ω tf 200 μs NON SATURATED TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.2 1.3 NCTRce - Normalized CTRce VF - Forward Voltage (V) 1.4 TA = - 55 °C 1.2 TA = 25 °C 1.1 1.0 0.9 TA = 100 °C 0.8 0.1 1 10 0.6 0.4 0.2 VCE = 5 V 2.0 1 10 100 1000 IF - LED Current (mA) iil66_03 Fig. 1 - Forward Voltage vs. Forward Current Fig. 3 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current 10 000 Normalized to: VCE = 5 V IF = 2 mA 1.5 VCE = 5 V 1.0 0.5 VCE = 1 V VCE = 1 V 1000 ICE - Collector Emitter Current (mA) NCTRce - Normalized CTRce 0.0 0.1 100 IF - Forward Current (mA) VCE = 1 V 0.8 0.7 iil66_01 Normalized to: VCE = 5 V IF = 10 mA 1.0 100 VCE = 5 V 10 1 0.1 0.01 0.001 0.0 0.1 iil66_02 1 10 100 I F - LED Current (mA) Fig. 2 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current Rev. 1.8, 22-Aug-12 0.1 iil66_04 1 10 100 IF - LED Current (mA) Fig. 4 - Non-Saturated and Saturated Collector Emitter Current vs. LED Current Document Number: 83638 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors 50 tpHL - High/Low Propagation Delay (µs) Icb - Photocurrent (µa) 1000 100 10 1 1 10 VCC = 5 V Vth = 1.5 V 30 220 Ω 20 10 0 100 5 10 15 20 IF - LED Current (mA) iil66_08 IF - LED Current (mA) Fig. 5 - Collector Base Photocurrent vs. LED Current Fig. 8 - High to Low Propagation Delay vs. Collector Load Resistance and LED Current 10 000 150 100 tpLH - Low/High Propagation Delay (µs) VCE = 5 V 1000 I CE - Collector-emitter Current (mA) 10 kΩ 0 0.1 0.1 iil66_05 40 VCE = 1 V 10 1 0.1 0.01 0.001 0.1 100 2 kΩ 75 VCC = 5 V 50 Vth = 1.5 V 25 220 kΩ 0 0 10 100 0 1000 5 Fig. 6 - Collector Emitter Current vs. LED Current 10 15 20 IF - LED Current (mA) iil66_09 I B - Base Current (µs) iil66_06 10 kΩ 125 Fig. 9 - Low to High Propagation Delay vs. Collector Load Resistance and LED Current hFE - Forward Gain 25 000 20 000 IF VCE = 5 V 15 000 10 000 VO 5000 tD tR t PLH VCE = 1 V V th = 1.5 V 0 0.1 iil66_07 1 10 100 1000 IB - Base Current (µA) Fig. 7 - Non-Saturated and Saturated hFE vs. LED Current Rev. 1.8, 22-Aug-12 t PHL tS tF iil66_10 Fig. 10 - Switching Waveform Document Number: 83638 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors VCC = 10 V f = 10 kHz, RL DF = 50 % VO IF iil66_11 Fig. 11 - Switching Schematic PACKAGE DIMENSIONS in millimeters 8.8 max. 7.62 ± 0.1 8.6 max. 6.4 max. B 3.3 0.5 min. 4.2 ± 0.1 0.3 A 0.3 max. 1.54 0.58 max. 9 ± 0.6 0.4 B 2.54 nom. 5.08 nom. A 5 6 4 Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 2 1 technical drawings according to DIN specifications 3 14770-1 Pin one ID 4 3 2 1 5 6 7 8 6.645 ± 0.165 ISO method A 9.77 ± 0.14 0.95 ± 0.19 7.62 typ. 0.79 4° typ. 3.555 ± 0.255 6.095 ± 0.255 1.27 10° 0.70 ± 0.19 0.51 ± 0.05 3.045 ± 0.255 3° to 9° 2.54 typ. 0.25 ± 0.05 Rev. 1.8, 22-Aug-12 i178006 Document Number: 83638 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IL66, ILD66, ILQ66 www.vishay.com Vishay Semiconductors Pin one ID 8 7 6 5 4 3 2 1 6.48 6.81 9 10 11 12 13 14 15 16 ISO method A 19.77 20.07 0.76 1.14 0.79 7.62 typ. 3.30 3.81 10° typ. 4° 0.51 0.89 0.46 0.56 2.54 typ. 2.79 3.30 3° to 9° 1.27 0.20 0.30 i178007 Option 7 Option 9 7.62 typ. 9.53 10.03 5.84 6.35 7.62 ref. 0.7 4.6 4.1 0.102 0.249 8 min. 0.25 typ. 0.51 1.02 15° max. 8.4 min. 8 min. 10.3 max. 0.76 R 0.25 2.54 0.76 2.54 R 0.25 1.78 8 min. 11.05 18450-7 1.78 1.52 8 min. 11.05 1.52 PACKAGE MARKING (example) ILD66 V YWW H 68 ILQ66 V YWW H 68 Notes • Only options 1 and 7 reflected in the package marking • The VDE logo is only marked on option 1 parts • Tape and reel suffix (T) is not part of the package marking Rev. 1.8, 22-Aug-12 Document Number: 83638 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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