CNY17F www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES • Isolation test voltage, 5000 VRMS A 1 6 NC C 2 5 C NC 3 4 E • No base terminal connection for improved common mode interface immunity • Long term stability • Industry standard dual-in-line package • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS Safety application model number covering all products in this datasheet is CNY17F. This model number should be used when consulting safety agency documents. i179004-14 • UL file no. E52744 DESCRIPTION • cUL tested to CSA 22.2 bulletin 5A The CNY17F is an optocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • BSI: EN 60065, EN 60950-1 • FIMKO EN60950 The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. • CQC GB8898-2011 In contrast to the CNY17 series, the base terminal of the F type is not conected, resulting in a substantially improved common-mode interference immunity. ORDERING INFORMATION C N Y 1 7 F - # PART NUMBER CTR BIN X 0 DIP-6 DIP-6, 400 mil, option 6 SMD-6, option 7 SMD-6, option 9 VDE, UL, cUL, BSI, FIMKO DIP-6 DIP-6, 400 mil, option 6 # PACKAGE OPTION AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO # T TAPE AND REEL DIP-6 Option 6 7.62 mm 10.16 mm Option 7 Option 9 > 8 mm 8 mm typ. CTR (%) 40 to 80 63 to 125 100 to 200 160 to 320 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1X006 CNY17F-2X006 CNY17F-3X006 CNY17F-4X006 CNY17F-1X007 (1) CNY17F-1X009T (1) CNY17F-2X007T (1) CNY17F-3X007T (1) CNY17F-4X007T (1) (1) (1) CNY17F-4X009T (1) CNY17F-2X009T CNY17F-3X009T 40 to 80 63 to 125 100 to 200 160 to 320 CNY17F-1X001 CNY17F-2X001 CNY17F-3X001 CNY17F-4X001 CNY17F-1X016 CNY17F-2X016 CNY17F-3X016 CNY17F-4X016 SMD-6, option 7 CNY17F-1X017 (1) CNY17F-2X017 (1) CNY17F-3X017 (1) CNY17F-4X017 (1) SMD-6, option 9 CNY17F-1X019 CNY17F-2X019 (1) CNY17F-3X019 (1) - Notes • Additional options may be possible, please contact sales office. (1) Also available in tubes; do not put T on end. Document Number: 83607 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Reverse voltage DC forward current Surge forward current Power dissipation OUTPUT Collector emitter breakdown voltage Collector current Collector peak current Output power dissipation COUPLER Isolation test voltage between emitter and detector Storage temperature range Ambient temperature range Junction temperature Soldering temperature (1) Total power dissipation TEST CONDITION SYMBOL VALUE UNIT VR IF IFSM Pdiss 6 60 2.5 100 V mA A mW BVCEO IC ICM Pdiss 70 50 100 150 V mA mA mW VISO 5000 VRMS Tstg Tamb Tj Tsld Pdiss -55 to +150 -55 to +110 100 260 250 °C °C °C °C mW t ≤ 10 μs tp/T = 0.5, tp ≤ 10 ms t = 1 min 2 mm from case, ≤ 10 s Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through hole parts (DIP). 300 Coupled device 250 200 Phototransistor 150 100 IR-diode 50 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Breakdown voltage Reverse current Capacitance OUTPUT Collector emitter capacitance Base collector capacitance Emitter base capacitance TEST CONDITION PART SYMBOL IF = 60 mA IR = 10 μA VR = 6 V VR = 0 V, f = 1 MHz VF VBR IR CO VCE = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz VCE = 5 V, f = 1 MHz CCE CBC CEB MIN. TYP. MAX. UNIT 1.39 1.65 0.01 25 10 V V μA pF 6 5.2 6.5 7.5 pF pF pF Document Number: 83607 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER COUPLER Collector emitter, saturation voltage Coupling capacitance Collector emitter, leakage current TEST CONDITION PART SYMBOL CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 VCEsat CC ICEO ICEO ICEO ICEO IF = 10 mA, IC = 2.5 mA VCE = 10 V MIN. TYP. MAX. UNIT 0.25 0.6 2 2 5 5 0.4 V pF nA nA nA nA 50 50 100 100 Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 10 mA IC/IF IF = 1 mA PART SYMBOL MIN. MAX. UNIT CNY17F-1 CTR 40 TYP. 80 % CNY17F-2 CTR 63 125 % CNY17F-3 CTR 100 200 % CNY17F-4 CTR 160 CNY17F-1 CTR 13 30 % CNY17F-2 CTR 22 45 % CNY17F-3 CTR 34 70 % CNY17F-4 CTR 56 90 % 320 % Note • Current transfer ratio IC/IF at VCE = 5 V, 25 °C and collector emitter leakage current by dash number. SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION LINEAR OPERATION (without saturation) IF = 10 mA, VCC = 5 V, Turn-on time RL = 75 Ω IF = 10 mA, VCC = 5 V, Rise time RL = 75 Ω IF = 10 mA, VCC = 5 V, Turn-off time RL = 75 Ω IF = 10 mA, VCC = 5 V, Fall time RL = 75 Ω IF = 10 mA, VCC = 5 V, Cut-off frequency RL = 75 Ω SWITCHING OPERATION (with saturation) IF = 20 mA Turn-on time IF = 10 mA IF = 5 mA IF = 20 mA Rise time IF = 10 mA IF = 5 mA IF = 20 mA Turn-off time IF = 10 mA IF = 5 mA IF = 20 mA Fall time IF = 10 mA IF = 5 mA PART CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4 SYMBOL MIN. TYP. MAX. UNIT ton 3 μs tr 2 μs toff 2.3 μs tf 2 μs fCO 110 kHz ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf 3 4.2 4.2 6 2 3 3 4.6 18 23 23 25 11 14 14 15 μs μs μs μs μs μs μs μs μs μs μs μs μs μs μs μs Document Number: 83607 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com IF Vishay Semiconductors +5V IF IF 0 0 tp IC R G = 50 Ω tp = 0.01 T t 100 % 90 % t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 10 % 0 tr RL td ts t on 95 10804-3 Fig. 2 - Test Circuit, Non-Saturated Operation IF +5V I F = 10 mA 0 tp td tr t on (= td + tr) tf t off ts tf t off (= ts + tf) Pulse duration Delay time Rise time Turn-on time t Storage time Fall time Turn-off time 96 11698 Fig. 4 - Switching Times IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 3 - Test Circuit, Saturated Operation SAFETY AND INSULATION RATINGS PARAMETER SYMBOL VALUE UNIT Output safety power PSO 700 mW Input safety current ISI 400 mA Safety temperature TSI 175 °C Comparative tracking index CTI 175 MAXIMUM SAFETY RATINGS INSULATION RATED PARAMETERS Maximum withstanding isolation voltage VISO 5000 Maximum transient isolation voltage VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage VIORM 890 Vpeak VRMS Insulation resistance Tamb = 25 °C, VDC = 500 V RIO ≥ 1012 Ω Isolation resistance Tamb = 100 °C, VDC = 500 V RIO ≥ 1011 Ω Climatic classification (according to IEC 68 part 1) 55/115/21 Environment (pollution degree in accordance to DIN VDE 0109) Creepage distance Clearance distance Insulation thickness 2 ≥7 Standard DIP-4 mm SMD ≥7 mm Standard DIP-4 ≥8 mm SMD DTI ≥8 mm ≥ 0.4 mm Note • As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Document Number: 83607 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com Vishay Semiconductors 1.8 1.7 Tamb = 0 °C 1.6 Tamb = - 25 °C 1.5 1.4 Tamb = - 40 °C 1.3 T = - 55 °C amb 1.2 1.1 Tamb = 25 °C 1.0 Tamb = 50 °C 0.9 Tamb = 75 °C 0.8 Tamb = 100 °C 0.7 Tamb = 110 °C 0.6 0.1 1 10 100 10 000 IF = 0 mA ICE0 - Leakage Current (nA) VF - Forward Voltage (V) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 VCE = 40 V 100 1 VCE = 12 V 0.1 0.01 0.001 - 60 - 40 - 20 0 20 40 60 80 100 IF - Forward Current (mA) Tamb - Ambient Temperature (°C) Fig. 5 - Forward Voltage vs. Forward Current Fig. 8 - Leakage Current vs. Ambient Temperature 60 1.2 CTRNorm - Normalized CTR (NS) IC - Collector Current (mA) VCE = 24 V 10 IF = 30 mA 50 40 IF = 20 mA 30 IF = 15 mA 20 IF = 10 mA 10 IF = 5 mA 0 0 1 2 3 4 5 7 6 0.8 0.6 0.4 0.2 0 -60 -40 -20 8 VCE = 5 V IF = 10 mA 1.0 0 20 40 60 80 100 120 VCE - Collector Emitter Voltage (NS) (V) Tamb - Ambient Temperature (°C) Fig. 6 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 9 - Normalized CTR (NS) vs. Ambient Temperature 25 IC - Collector Current (mA) 20 15 IF = 10 mA 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.1 0 0.2 0.3 0.4 CTRNorm - Normalized CTR (sat) 1.2 IF = 25 mA VCE = 0.4 V IF = 10 mA 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 120 VCE - Collector Emitter Voltage (sat) (V) Tamb - Ambient Temperature (°C) Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat) Fig. 10 - Normalized CTR (sat) vs. Ambient Temperature Document Number: 83607 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com 1000 1.2 IF = 10 mA VCE = 5 V VCC = 5 V fCTR - CTR Frequency (kHz) CTRNorm - Normalized CTR (NS) Vishay Semiconductors Tamb = 25 °C 1.0 Tamb = 0 °C 0.8 Tamb = - 40 °C Tamb = - 55 °C 0.6 Tamb = 50 °C Tamb = 75 °C 0.4 Tamb = 100 °C 0.2 100 10 Tamb = 110 °C 0 0.1 1 1 0.1 100 10 1 10 100 IF - Forward Current (mA) IC - Collector Current (mA) Fig. 11 - Normalized CTR (NS) vs. Forward Current Fig. 14 - CTR -3 dB Frequency vs. Collector Current 1000 IF = 10 mA VCE = 0.4 V VCE = 5 V, IF = 10 mA ton, toff - Switching Time (μs) CTRNorm - Normalized CTR (sat) 1.2 Tamb = 25 °C 1.0 Tamb = 0 °C Tamb = - 40 °C 0.8 Tamb = - 55 °C 0.6 Tamb = 50 °C 0.4 Tamb = 75 °C Tamb = 100 °C 0.2 toff 100 10 ton 1 Tamb = 110 °C 0 0.1 1 10 100 0.1 0.1 1 10 100 IF - Forward Current (mA) RL - Load Resistance (kΩ) Fig. 12 - Normalized CTR (sat) vs. Forward Current Fig. 15 - Switching Time vs. Load Resistance 0 VCE = 5 V - 20 Phase (deg) - 40 - 60 - 80 - 100 - 120 - 140 - 160 1 10 100 1000 f - Frequency (kHz) Fig. 13 - CTR Frequency vs. Phase Angle Document Number: 83607 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6 5 4 6.5 ± 0.5 1 2 3 7.3 ± 0.5 7.62 ± 0.3 1.1 ± 0.1 3.5 ± 0.3 0.5 typ. 3.3 ± 0.5 2.8 ± 0.5 0.26 0.5 ± 0.1 2.54 ± 0.25 7.62 to 9.98 22530 Option 6 Option 7 7.62 typ. 7.62 typ. 3.5 ± 0.3 7.62 typ. 3.5 ± 0.3 0.35 ± 0.25 0.1 min. Option 9 0.6 min. 8 min. 2.7 min. 10.16 typ. 0.1 ± 0.1 0.6 min. 3.5 ± 0.3 8.16 ± 0.8 10.16 ± 0.3 10.3 max. 0.76 R 0.25 2.54 0.76 2.54 R 0.25 1.78 8 min. 11.05 20802-34 1.52 1.78 8 min. 11.05 1.52 PACKAGE MARKING (Example of CNY17F-2x017T) CNY17F-2 Pin 1 I.D. V YWW 25 Notes • VDE logo is only marked on option 1 parts. Option information is not marked on the part. • Tape and reel suffix (T) is not part of the package marking. Document Number: 83607 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 2.2, 08-Jan-14 CNY17F www.vishay.com Vishay Semiconductors TUBE AND TAPE INFORMATION DEVICES PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-6 50 40 2000 Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 16 ± 0.3 12 ± 0.1 0.3 ± 0.05 22537-1 Fig. 16 - Tape and Reel Drawing, 1000 Units per Reel Document Number: 83607 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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