K815P, K825P, K845P Datasheet

K815P, K825P, K845P
www.vishay.com
Vishay Semiconductors
Optocoupler, Photodarlington Output
FEATURES
• Endstackable to 2.54 mm (0.1") spacing
C
C
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Material categorization: For definitions of
compliance
please
see
www.vishay.com/doc?99912
16 pin
1
• Isolation test voltage 5300 VRMS
4 pin
A
8 pin
A 1
APPLICATIONS
• Programmable logic controllers
• Modems
• Answering machines
• General applications
AGENCY APPROVALS
• UL1577, file no. E76222 system code C, double protection
• CSA 22.2 bulletin 5A, double protection
• CQC: GB8898-2001 (K815P only)
DESCRIPTION
In the K815P, K825P, K845P parts, each channel consist of
a photodarlington optically coupled to a gallium arsenide
infrared-emitting diode in an 4 pin, 8 pin, and 16 pin plastic
dual inline package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
ORDERING INFORMATION
K
8
#
5
P
DIP-4/DIP-8/DIP-16
PART NUMBER
7.62 mm
AGENCY CERTIFIED/PACKAGE
CTR (%)
UL, cUL
> 600
DIP-4 (CQC)
K815P
DIP-8
K825P
DIP-16
K845P
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
Power dissipation
Junction temperature
Rev. 2.1, 24-Sep-12
tp ≤ 10 μs
IFSM
1.5
A
Pdiss
100
mW
Tj
125
°C
Document Number: 83524
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
K815P, K825P, K845P
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
35
V
Emitter collector voltage
VECO
7
V
OUTPUT
Collector current
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
IC
80
mA
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
COUPLER
VISO
5
kV
Total power dissipation
AC isolation test voltage (RMS)
t = 1 min, f = 50 Hz
Ptot
250
mW
Operating ambient temperature
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Soldering temperature (1)
Tsld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 20 mA
VF
Reverse current
VR = 6 V
IR
MIN.
TYP.
MAX.
UNIT
1.2
1.4
V
10
μA
INPUT
OUTPUT
Collector emitter voltage
IC = 100 μA
VCEO
35
Emitter collector voltage
IE = 100 μA
VCEO
7
VCE = 10 V, IF = 0 A, E = 0
ICEO
100
nA
Collector emitter saturation voltage
IC = 5 mA, IF = 20 mA
VCEsat
0.1
V
Cut-off frequency
IF = 10 mA, VCE = 5 V,
RL = 100 Ω
fc
10
kHz
f = 1 MHz
Ck
0.3
pF
Collector dark current
V
V
COUPLER
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
IC/IF
IF = 1 mA, VCE = 2 V
CTR
600
800
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Rise time
VCE = 2 V, IC = 10 mA, RL = 100 Ω
(see figure 1)
tr
300
μs
Turn-off time
VCE = 2 V, IC = 10 mA, RL = 100 Ω
(see figure 1)
toff
250
μs
Rev. 2.1, 24-Sep-12
MIN.
TYP.
MAX.
UNIT
Document Number: 83524
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
K815P, K825P, K845P
www.vishay.com
Vishay Semiconductors
IF
IF
0
+ V CC
IF
0
I C = 10 mA
t
100 %
90 %
R G = 50 Ω
tp
= 0.01
T
t p = 50 s
10 %
0
Channel I
tr
Oscilloscope
R I = 1 MΩ
C I = 20 pF
Channel II
50 Ω
tp
IC
RL
14779
td
ts
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
Fig. 1 - Test Circuit, Non-Saturated Operation
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 2 - Switching Times
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I F = 10 mA
VF - Forward Voltage (V)
1.2
1.1
1.0
0.9
0.8
0
14389
40
60
80
100
Tamb - Ambient Temperature (°C)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
14391
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
I CEO - Collector Dark Current,
with Open Base (nA)
I F - Forward Current (mA)
1.2
10 000
100
10
1
VCE = 10 V
IF = 0
1000
100
10
1
0.4
0.8
1.2
1.6
20
2.0
V F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Rev. 2.1, 24-Sep-12
1.3
100 000
1000
14390
VCE = 5 V
I F = 1 mA
1.4
20
Fig. 3 - Forward Voltage vs. Ambient Temperature
0.1
0.0
1.5
CTR rel - Relative Current Transfer Ratio
1.3
14392
30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 6 - Collector Dark Current vs. Ambient Temperature
Document Number: 83524
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
K815P, K825P, K845P
www.vishay.com
V CEsat - Collector Emitter Saturation Voltage (V)
Vishay Semiconductors
1000
IC - Collector Current (mA)
VCE = 2 V
100
10
1
0.1
0.1
1
10
100
1.1
CTR = 200 % used
1.0
100 %
0.9
0.8
0.7
0.6
1
10
I F - Forward Current (mA)
14393
Fig. 9 - Collector Emitter Saturation Voltage vs. Collector Current
10 000
100
CTR - Current Transfer Ratio (%)
I F = 2 mA
I C - Collector Current (mA)
100
I C - Collector Current (mA)
14395
Fig. 7 - Collector Current vs. Forward Current
50 %
25 %
1 mA
10
0.5 mA
0.2 mA
1
0.1 mA
0.1
0.1
1
10
1000
100
10
0.1
100
VCE - Collector Emitter Voltage (V)
14394
VCE = 2 V
1
10
I F - Forward Current (mA)
14396
Fig. 8 - Collector Current vs. Collector Emitter Voltage
100
Fig. 10 - Current Transfer Ratio vs. Forward Current
PACKAGE DIMENSIONS in inches (millimeters)
SMD
0.76
2.54
R 0.25
1.78
6.48
6.81
1.52
8 min.
11.05
3
PIN 1 IDENTIFICATION
4
9.52
10.03
4.55
4.83
0.76
1.14
7.52
7.90
0.79 typ.
10°
ISO method A
3.30
3.81
4° typ.
0.25 typ.
8 min.
0.249
0.102
2.54 typ.
1.27 typ.
i178029-2
Rev. 2.1, 24-Sep-12
Lead
coplanarity
0.004 max.
0.508
1.020
3° to 7°
Document Number: 83524
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
K815P, K825P, K845P
www.vishay.com
Vishay Semiconductors
Pin one ID
4
3
2
1
5
6
7
8
6.645 ± 0.165
ISO method A
9.77 ± 0.14
0.95 ± 0.19
7.62 typ.
0.79
4° typ.
3.555 ± 0.255
6.095 ± 0.255
1.27
10°
3.045 ± 0.255
0.70 ± 0.19
3° to 9°
0.51 ± 0.05
2.54 typ.
0.25 ± 0.05
i178006
Pin one ID
8
7
6
5
4
3
2
1
6.48
6.81
9
10
11
12
13
14
15
16
ISO method A
19.77
20.07
0.76
1.14
0.79
7.62 typ.
3.30
3.81
4°
0.51
0.89
0.46
0.56
2.54 typ.
1.27
10°
typ.
3° to 9°
i178007
2.79
3.30
5.84
6.35
0.20
0.30
PACKAGE MARKING
K825P
K845P
K815P
V YWW H 68
Rev. 2.1, 24-Sep-12
V YWW H 68
V YWW H 68
Document Number: 83524
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000