TP0101K Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • ESD Protected: 3000 V (A)e 0.65 at VGS = - 4.5 V - 0.58 0.85 at VGS = - 2.5 V - 0.5 APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems, DC/DC Converters • Power Supply Converter Circuits • Load/Power Switching-Cell Phones, Pagers D TO-236 (SOT-23) Marking Code: K4ywl G 100 Ω 1 G K4 = Part Number Code for TP0101K 3 D 2 S y = Year Code w = Week Code l = Lot Traceability Top View S Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free) TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C Pulsed Drain Currenta Continuous Source-Drain (Diode Current)b TA = 25 °C Power Dissipationb TA = 70 °C V - 0.58 ID - 0.46 IDM -2 IS - 0.3 A 0.35 PD W 0.22 TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 150 °C Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 10 s. THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambientb Symbol Limits Unit RthJA 357 °C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 10 s. Document Number: 72692 S-83053-Rev. B, 29-Dec-08 www.vishay.com 1 TP0101K Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. - 0.7 - 1.0 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS VGS = 0 V, ID = - 10 µA - 20 VGS(th) VDS = VGS, ID = - 50 µA - 0.5 IGSS VDS = - 0 V, VGS = ± 4.5 V ±5 VDS = - 20 V, VGS = 0 V -1 IDSS ID(on) VDS = - 20 V, VGS = 0 V, TJ = 55 °C µA - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 1.2 VDS ≤ - 5 V, VGS = - 2.5 V - 0.5 A VGS = - 4.5 V, ID = - 0.58 A 0.42 0.65 VGS = - 2.5 V, ID = - 0.5 A 0.64 0.85 gfs VDS = - 5 V, ID = - 0.58 A 1300 VSD IS = - 0.3 A, VGS = 0 V - 0.9 - 1.2 1400 2200 RDS(on) V Ω mS V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Time Turn-Off Time VDS = - 6 V, VGS = - 4.5 V ID ≅ - 0.58 A td(off) tf 250 Ω 150 td(on) tr pC 300 VDD = - 6 V, RL = 10 Ω ID ≅ - 0.58 A, VGEN = - 4.5 V, Rg = 6 Ω 25 35 30 45 55 85 38 60 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72692 S-83053-Rev. B, 29-Dec-08 TP0101K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 2.0 TJ = - 55 °C VGS = 5 thru 3 V 2.5 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 1.6 1.2 2V 0.8 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.2 125 °C 0.8 0.4 1.5 V 0.4 25 °C 0.0 0.0 4.0 0.5 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 200 175 2.5 Ciss 150 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 2.0 1.5 VGS = 2.5 V 1.0 125 100 75 Coss 50 VGS = 4.5 V Crss 0.5 25 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4 ID - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 1.7 VDS = 6 V ID = 0.6 A 4 1.5 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 3 2 1 0 0.0 VGS = 4.5 V ID = 0.6 A 1.3 1.1 0.9 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72692 S-83053-Rev. B, 29-Dec-08 1.2 1.5 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 TP0101K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 4 TJ = 150 °C 2.5 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 1 0.1 TJ = 25 °C 0.01 2.0 ID = 0.6 A 1.5 1.0 0.5 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 100 000 10 000 0.3 ID = 50 µA I GSS - Gate Current (µA) V GS(th) Variance (V) 1 VSD - Source-to-Drain Voltage (V) 0.2 0.1 0.0 1000 100 TJ = 150 °C 10 1 0.1 TJ = 25 °C - 0.1 0.01 - 0.2 - 50 0.001 - 25 0 25 50 75 100 125 150 0 4 2 TJ - Temperature (°C) 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Gate Current vs. Gate-Source Voltage 10 5 IDM Limited RDS(on) Limited * I D - Drain Current (A) Power (W) 4 3 2 1 1 ms 10 ms ID(on) Limited 0.1 1s 10 s DC TA = 25 °C Single Pulse 0.01 1 100 ms BVDSS Limited 0 0.01 0.001 0.1 1 10 100 Time (s) Single Pulse Power, Junction-to-Ambient www.vishay.com 4 600 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 72692 S-83053-Rev. B, 29-Dec-08 TP0101K Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72692. Document Number: 72692 S-83053-Rev. B, 29-Dec-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000