SUD45P03-10 P-Channel 30-V (D-S), MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.010 at VGS = - 10 V - 15 0.018 at VGS = - 4.5 V - 12 VDS (V) - 30 • TrenchFET® Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S D Top View P-Channel MOSFET Ordering Information: SUD45P03-10-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Currentb TA = 25 °C TA = 100 °C Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C V - 15 ID -8 IDM - 100 IS - 15 A 70 PD TJ, Tstg Unit W 4b - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb RthJA 30 Maximum Junction-to-Case RthJC 1.8 Unit °C/W Notes: a. Calculated Rating for TA = 25 °C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 board, t ≤ 10 s. 1/7 www.freescale.net.cn SUD45P03-10 P-Channel 30-V (D-S), MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance a RDS(on) - 3.0 ± 100 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 5 V, VGS = - 10 V - 50 VDS = - 5 V, VGS = - 4.5 V - 20 VGS = - 10 V, ID = - 15 A 0.010 VGS = - 10 V, ID = - 15 A, TJ = 125 °C 0.015 gfs VDS = - 15 V, ID = - 15 A nA µA A VGS = - 4.5 V, ID = - 15 A Forward Transconductancea V Ω 0.018 20 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 6000 VGS = 0 V, VDS = - 25 V, f = 1 MHz pF 1100 700 90 VDS = - 15 V, VGS = - 10 V, ID = - 45 A 150 20 nC Gate-Drain Charge Qgd 16 Turn-On Delay Timec td(on) 15 25 375 550 100 200 140 250 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = - 15 V, RL = 0.33 Ω ID ≅ - 45 A, VGEN = - 10 V, RG = 2.4 Ω tf ns Source-Drain Diode Ratings and Characteristic TC = 25 °C ISM Pulsed Current 100 A Voltagea VSD IF = - 45 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF = - 45 A, dI/dt = 100 A/µs 55 100 ns Diode Forward Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/7 www.freescale.net.cn SUD45P03-10 P-Channel 30-V (D-S), MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 250 VGS = 10, 9, 8, 7 V 80 200 I D - Drain Current (A) I D - Drain Current (A) 6V 150 5V 100 4V 60 40 TC = 125 °C 20 50 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.05 80 60 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 0 10 20 30 40 0 50 20 40 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 8000 20 VDS = 15 V ID = 45 A VGS - Gate-to-Source Voltage (V) Ciss 6000 C - Capacitance (pF) 60 4000 Coss 2000 16 12 8 4 Crss 0 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance 3/7 25 30 0 30 60 90 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 120 SUD45P03-10 P-Channel 30-V (D-S), MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.0 VGS = 10 V ID = 45 A I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.6 1.2 0.8 TJ = 150 °C TJ = 25 °C 10 0.4 0.0 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 1 150 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage 20 500 16 100 I D - Drain Current (A) I D - Drain Current (A) THERMAL RATINGS 12 8 10, 100 µs Limited by R DS(on)* 1 ms 10 10 ms 100 ms 1s 1 TA = 25 °C Single Pulse 4 DC 0 0 25 50 75 100 TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature 125 150 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 www.freescale.net.cn SUD45P03-10 P-Channel 30-V (D-S), MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 5/7 www.freescale.net.cn 0.410 SUD45P03-10 P-Channel 30-V (D-S), MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 6/7 Return to Index www.freescale.net.cn SUD45P03-10 P-Channel 30-V (D-S), MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay Material Category Policy freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwis e specified as non-compliant. Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU. 7/7 www.freescale.net.cn