Analog Power AM4520H P & N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed -20 rDS(on) (mΩ) 47 @ VGS = 4.5V 55 @ VGS = 2.5V 79 @ VGS = -4.5V 110 @ VGS = -2.5V ID(A) 6.6 6.2 -5.2 -4.4 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±8 ±8 TA=25°C 6.6 -5.2 ID Continuous Drain Current a TA=70°C 5 -3.8 IDM Pulsed Drain Current b 20 -20 a I 2.2 -2.2 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4520H_1A Analog Power AM4520H Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±8 V VDS = 8 V, VGS = 0 V (N-ch) VDS = -8 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 4.5 V (N-ch) VDS = -5 V, VGS = -4.5 V (P-ch) VGS = 4.5 V, ID = 5.3 A (N-ch) VGS = 2.5 V, ID = 5 A (N-ch) VGS = -4.5 V, ID = -4.2 A (P-ch) VGS = -2.5 V, ID = -3.8 A (P-ch) VDS = 10 V, ID = 5.3 A (N-ch) VDS = -10 V, ID = -4.2 A (P-ch) IS = 1.1 A, VGS = 0 V (N-ch) IS = -1.1 A, VGS = 0 V (P-ch) Dynamic N - Channel VDS = 10 V, VGS = 4.5 V, ID = 5.3 A N - Channel VDD = 10 V, RL = 1.8 Ω, ID = 5.3 A, VGEN = 4.5 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -10 V, VGS = 4.5 V, ID = -4.2 A P - Channel VDD = -10 V, RL = 2.3 Ω, ID = -4.2 A, VGEN = -4.5 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 Min Typ Max 1 -1 ±100 1 -1 10 -10 Unit V V nA uA A A 47 55 79 110 10 10 0.7 -0.73 6 0.9 2.1 7 24 35 19 439 78 68 11 2.8 2.7 10 20 49 21 683 90 75 mΩ mΩ S S V V nC ns pF nC ns pF Publication Order Number: DS_AM4520H_1A Analog Power AM4520H Typical Electrical Characteristics - N-channel 0.08 10 TJ = 25°C 8 0.06 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.07 2V 0.05 2.5V 3V 0.04 3.5V,4V,4.5V,6V 0.03 0.02 6 4 2 0.01 0 0 0 2 4 6 ID-Drain Current (A) 8 10 0 1 2 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.14 TJ = 25°C ID = 5.3A 0.12 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 0.1 0.08 0.06 0.04 1 0.1 0.02 0 0.01 0 1 2 3 4 5 6 0 0.2 0.4 VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 10 1 1.2 1.4 1.6 800 F = 1MHz 700 8 600 3V 7 2.5V 6 Capacitance (pf) ID - Drain Current (A) 0.8 4. Drain-to-Source Forward Voltage 6V,4.5V,4V,3.5V 9 0.6 VSD - Source-to-Drain Voltage (V) 2V 5 4 3 Ciss 500 400 300 200 2 Coss 100 1 0 Crss 0 0 0.2 0.4 0.6 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM4520H_1A Analog Power AM4520H Typical Electrical Characteristics - N-channel 2 8 7 ID = 5.3A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = 10V 6 5 4 3 2 1.5 1 1 0 0.5 0 2 4 6 8 10 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 100 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM4520H_1A Analog Power AM4520H Typical Electrical Characteristics - P-channel 10 0.16 TJ = 25°C 8 0.12 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 9 2V 2.5V 0.08 3V 3.5V,4V,4.5V,6V 0.04 7 6 5 4 3 2 1 0 0 0 2 4 6 8 0 1 ID-Drain Current (A) 1. On-Resistance vs. Drain Current 3 2. Transfer Characteristics 10 0.3 TJ = 25°C ID = -4.2A 0.25 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 0.2 0.15 0.1 1 0.1 0.05 0 0.01 0 2 4 6 0 0.2 0.4 VGS - Gate-to-Source Voltage (V) 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 1400 8 F = 1MHz 1200 6V,4.5V,4V,3.5V,3V 6 Capacitance (pf) ID - Drain Current (A) 0.6 2.5V 2V 4 2 1000 Ciss 800 600 400 Coss 200 Crss 0 0 0 0.2 0.4 0.6 0 0.8 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AM4520H_1A Analog Power AM4520H Typical Electrical Characteristics - P-channel 8 2 7 ID = -4.2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = -10V 6 5 4 3 2 1.5 1 1 0 0.5 0 5 10 15 20 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 30 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 1 DC Idm limit Limited by RDS 25 20 15 10 5 0 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM4520H_1A Analog Power AM4520H Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. © Preliminary 7 Publication Order Number: DS_AM4520H_1A