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Analog Power
AM1523CE
N & P-Channel 20-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
PRODUCT SUMMARY
rDS(on) (mΩ)
VDS (V)
90 @ VGS = 4.5V
20
120 @ VGS = 2.5V
200 @ VGS = -4.5V
-20
370 @ VGS = -2.5V
ID(A)
1.5
1.3
-1.0
-0.5
SC70-6
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
20
-20
VGS
Gate-Source Voltage
±8
±8
TA=25°C
1.5
1.0
ID
Continuous Drain Current a
TA=70°C
1.3
0.9
b
IDM
Pulsed Drain Current
5
-5
a
I
0.43
-0.45
Continuous Source Current (Diode Conduction)
S
T
=25°C
0.3
0.3
A
PD
Power Dissipation a
TA=70°C
0.21
0.21
TJ, Tstg
-55 to 150
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 5 sec
Steady State
Symbol Maximum
415
RθJA
460
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM1523CE_1A
Analog Power
AM1523CE
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
rDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±8 V
VDS = 16 V, VGS = 0 V
(N-ch)
VDS = -16 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 4.5 V
(N-ch)
VDS = -5 V, VGS = -4.5 V (P-ch)
VGS = 4.5 V, ID = 1.2 A
(N-ch)
VGS = 2.5 V, ID = 0.96 A (N-ch)
VGS = -4.5 V, ID = -0.8 A (P-ch)
VGS = -2.5 V, ID = -0.64 A (P-ch)
VDS = 10 V, ID = 1.2 A
(N-ch)
VDS = -10 V, ID = -0.8 A (P-ch)
IS = 0.2 A, VGS = 0 V
(N-ch)
IS = -0.2 A, VGS = 0 V
(P-ch)
Dynamic
N - Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.2 A
N - Channel
VDD = 10 V, RL = 8.3 Ω,
ID = 1.2 A,
VGEN = 4.5 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P - Channel
VDS = -10 V, VGS = 4.5 V, ID = -0.8 A
P - Channel
VDD = -10 V, RL = 12.5 Ω,
ID = -0.8 A,
VGEN = -4.5 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
2
Min
Typ
Max
0.3
-0.3
±10
1
-1
1.5
-1.5
Unit
V
V
uA
uA
A
A
90
120
200
370
3
5
0.65
-0.66
5
0.3
0.7
8
13
25
8
73
25
20
4
0.5
0.9
8
10
28
13
120
28
25
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AM1523CE_1A
Analog Power
AM1523CE
Typical Electrical Characteristics - N-channel
2.0
0.25
0.2
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
1.8V
0.15
2V
2.5V
0.1
3V,3.5V,4V,4.5V,6V
0.05
0
1.5
1.0
0.5
0.0
0
0.5
1
1.5
2
0
1
2
VGS - Gate-to-Source Voltage (V)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.6
TJ = 25°C
ID = 1.2A
0.5
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
3
0.4
0.3
0.2
1
0.1
0.1
0
0.01
0
2
4
6
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
2
160
F = 1MHz
6V,4.5V,4V,3.5V,3V
1.5
120
Capacitance (pf)
ID - Drain Current (A)
140
2.5V
2V
1
1.8V
0.5
100
Ciss
80
60
Coss
40
Crss
20
0
0
0
0.05
0.1
0.15
0.2
0.25
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM1523CE_1A
Analog Power
AM1523CE
Typical Electrical Characteristics - N-channel
2
8
ID = 1.2A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = 10V
6
4
2
1.5
1
0.5
0
-50
0
1
2
3
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
15
PEAK TRANSIENT POWER (W)
100
10 uS
100 uS
10
1 mS
ID Current (A)
-25
4
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
10
5
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 460°C /W
0.1
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM1523CE_1A
Analog Power
AM1523CE
0.4
2.0
0.3
1.5
TJ = 25°C
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics - P-channel
1.8V
2V
0.2
2.5V
3V,3.5V,4V,4.5V,6V
0.1
1.0
0.5
0.0
0
0
0.5
1
1.5
ID-Drain Current (A)
0
2
1
1. On-Resistance vs. Drain Current
3
2. Transfer Characteristics
10
0.8
TJ = 25°C
ID = -0.8A
TJ = 25°C
0.6
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
0.4
0.2
0
1
0.1
0.01
0
2
4
6
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
250
2
F = 1MHz
6V,4.5V,4V,3.5V,3V,2.5V
Capacitance (pf)
ID - Drain Current (A)
200
1.5
2V
1.8V
1
0.5
150
Ciss
100
Coss
50
Crss
0
0
0
0.1
0.2
0.3
0.4
0.5
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
5
Publication Order Number:
DS_AM1523CE_1A
Analog Power
AM1523CE
Typical Electrical Characteristics - P-channel
8
2
ID = -0.8A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = -10V
6
4
2
1.5
1
0
0.5
0
2
4
6
8
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
15
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
1
DC
Idm limit
Limited by
RDS
10
0
0.001
0.01
0.1
1
10
5
100
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 460°C /W
0.1
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM1523CE_1A
Analog Power
AM1523CE
Package Information
© Preliminary
7
Publication Order Number:
DS_AM1523CE_1A