1N4148W www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diodes • AEC-Q101 qualified • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART 1N4148W ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS A2 Single diode Tape and reel 1N4148W-E3-08 or 1N4148W-E3-18 1N4148W-HE3-08 or 1N4148W-HE3-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VR 75 V VRRM 100 V f 50 Hz IF(AV) 150 mA tp < 1 s IFSM 500 mA tp = 1 μs IFSM 2 A Ptot 350 mW SYMBOL VALUE UNIT RthJA 357 K/W Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C Reverse voltage Repetitive peak reverse voltage Average rectified current half wave rectification with resistive load (1) Surge forward current Power dissipation (1) THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air TEST CONDITION (1) Junction temperature Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.7, 08-May-13 Document Number: 85748 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 10 mA VF 1 V IF = 100 mA VF 1.2 V VR = 20 V IR 25 nA VR = 75 V IR 5 μA VR = 100 V IR 100 μA VR = 20 V, TJ = 150 °C IR 50 μA VF = VR = 0 V CD 4 pF Tested with 50 mA pulses, tp = 0.1 μs, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V IF = 10 mA, iR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Forward voltage Leakage current Diode capacitance Voltage rise when switching ON Reverse recovery time MIN. TYP. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 103 500 450 Tj = 100 °C Ptot - Power Dissipation (mW) 102 Tj = 25 °C IF (mA) 10 1 10-1 400 350 300 250 200 150 100 10-2 50 0 1 0 20809 VF (V) 17437 0 2 Fig. 1 - Forward Characteristics 50 100 Tamb - Ambient Temperature (°C) Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 °C 5 Tj = 25 °C 1.1 f = 1 MHz f = 1 kHz 2 150 103 1.0 CD (VR) 2 102 5 CD (0 V) Rf (Ω) 5 0.9 0.8 2 10 5 0.7 2 10-2 17438 10-1 1 10 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.7, 08-May-13 0 102 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Document Number: 85748 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148W www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 0 100 17441 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature 100 5 4 3 2 I IFRM (A) 1 T = 1/fP IFRM 10 5 4 3 2 n = tP/T tP n=0 t T 0.1 0.2 0.5 5 4 3 2 0.1 10-5 17442 2 5 10-4 2 5 10-3 2 5 10-2 2 5 10-1 2 5 1 2 5 10 tP (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration Rev. 1.7, 08-May-13 Document Number: 85748 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N4148W www.vishay.com Vishay Semiconductors 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.7, 08-May-13 Document Number: 85748 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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