BAR64V-05W www.vishay.com Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 FEATURES • High voltage current controlled RF resistor 3 • Small diode capacitance • Low series inductance • Low forward resistance • Improved performance due to two separate dice 1 2 • Base P/N-E3 - RoHS-compliant, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Characterized by low reverse capacitance the PIN diodes BAR64V-05W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for these PIN diodes are switches and attenuators in wireless, mobile, and TV-systems. APPLICATIONS • For frequencies up to 3 GHz • RF-signal tuning • Signal attenuator and switches • Mobile, wireless and TV-Applications MECHANICAL DATA Case: SOT-323 Weight: approx. 5.7 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART BAR64V-05W ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS BAR64V-05W-E3-08 or BAR64V-05W-E3-18 DW5 Dual diodes common cathode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PART SYMBOL VALUE Reverse voltage TEST CONDITION VR 100 UNIT V Forward continuous current IF 100 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Tj 150 °C Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Top - 55 to + 125 °C Junction temperature Rev. 1.5, 25-Feb-13 TEST CONDITION Document Number: 81836 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAR64V-05W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL Forward voltage IF = 50 mA VF Reverse voltage IF = 10 μA VR Reverse current Diode capacitance TYP. MAX. 1.1 UNIT V 100 V VR = 50 V IR f = 1 MHz, VR = 0 V CD 0.5 f = 1 MHz, VR = 1 V CD 0.37 0.5 pF 0.05 μA pF f = 1 MHz, VR = 20 V CD 0.23 0.35 pF f = 100 MHz, IF = 1 mA rf 10 20 f = 100 MHz, IF = 10 mA rf 2 3.8 f = 100 MHz, IF = 100 mA rf 0.8 1.35 IF = 10 mA, IR = 6 mA, iR = 3 mA trr 1.8 μs LS 1 nH Differential forward resistance Charge carrier lifetime MIN. Series inductance TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100.00 I F - Forward Current (mA) rf - Forward Resistance (Ω) 100.0 f = 100 MHz 10.0 1.0 0.1 0.1 10.00 0.10 0.01 1 10 100 0.5 IF - Forward Current (mA) 18342 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage (V) 18326 Fig. 1 - Forward Resistance vs. Forward Current Fig. 3 - Forward Current vs. Forward Voltage 12 0.50 f = 1 MHz IF = 10 mA 10 I F - Forward Current (mA) 0.45 CD - Diode Capacitance (pF) 1.00 0.40 0.35 0.30 0.25 0.20 0.15 0.10 8 IR = 6 mA 6 iR = 3 mA 4 2 0 -2 -4 -6 0.05 -8 - 500 0.00 0 18334 4 8 12 16 20 24 28 VR - Reverse Voltage (V) Fig. 2 - Diode Capacitance vs. Reverse Voltage Rev. 1.5, 25-Feb-13 18338 500 1500 2500 3500 trr - Reverse Recovery Time (ns) Fig. 4 - Typical Charge Recovery Curve Document Number: 81836 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAR64V-05W www.vishay.com Vishay Semiconductors 0 |S21|² - Insertion Loss (dB) - 0.5 IF = 3mA -1 IF = 10 mA IF = 100 mA IF = 1 mA - 1.5 IF = 0.5 mA -2 - 2.5 -3 0 0.5 1 1.5 2 2.5 3 3.5 f - Frequency (GHz) 21027 Fig. 5 - Insertion Loss of One Diode Inserted in Series with 50 Strip Line |S21|² = |S12 |² - Isolation (dB) 0 -5 - 10 - 15 VR = 0, diode zero-biased - 20 - 25 0 0.5 1 1.5 2 2.5 3 3.5 f - Frequency ( GHz ) 21028 IP2 - Second Order Intercept Point (dBm) Fig. 6 - Isolation of One Diode Inserted in Series with 50 Strip Line 150 100 f = 1.8 GHz f = 0.9 GHz 50 0 0.1 21029 1 10 IF - Forward Current (mA) Fig. 7 - Second Order Intercept Point for One Diode Inserted in 50 Strip Line Rev. 1.5, 25-Feb-13 Document Number: 81836 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAR64V-05W www.vishay.com Vishay Semiconductors 8° 0° 0.15 (0.006) 0.08 (0.003) 0.0 (0.000) 0.1 (0.004) 2.0 (0.079) 0.8 (0.031) 1.1 (0.043) 2.2 (0.087) 0.8 (0.031) 1.0 (0.039) PACKAGE DIMENSIONS in millimeters (inches): SOT-323 0.46 (0.018) 0.26 (0.010) 0.525 (0.021) ref. 0.4 (0.016) 0.2 (0.008) 2.45 (0.096) 1.35 (0.053) 0.65 (0.026) typ 1.15 (0.045) 2.15 (0.085) foot print recommendation: 0.6 (0.024) 1.4 (0.055) Document no.: 6.541-5040.02-4 Rev. 1 - Date: 06. April 2010 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 1.2 (0.047) 21113 1.3 (0.051) Rev. 1.5, 25-Feb-13 Document Number: 81836 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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