Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
MBD128
PBSS5240Y
40 V low VCEsat PNP transistor
Product data sheet
Supersedes data of 2001 Oct 24
2002 Feb 28
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240Y
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
−40
V
ICM
peak collector current
−3
A
IC
collector current (DC)
−2
A
RCEsat
equivalent on-resistance
<200
mΩ
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
PIN
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
1
collector
2
collector
3
base
4
emitter
5
collector
6
collector
DESCRIPTION
PNP low VCEsat transistor in a SOT363 (SC-88) plastic
package.
NPN complement: PBSS4240Y.
handbook, halfpage
6
5
4
1, 2, 5, 6
3
MARKING
4
MARKING CODE(1)
TYPE NUMBER
PBSS5240Y
1
52*
Top view
Note
Fig.1
1. * = p: made in Hongkong.
* = t: made in Malaysia.
2002 Feb 28
2
2
3
MAM464
Simplified outline (SOT363; SC-88) and
symbol.
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−2
A
ICM
peak collector current
−
−3
A
IBM
peak base current
−
−300
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
270
mW
Tamb ≤ 25 °C; note 2
−
430
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
note 1
463
K/W
note 2
291
K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
2002 Feb 28
3
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240Y
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector-base cut-off current VCB = −30 V; IE = 0
MIN.
MAX.
UNIT
−
−100
nA
VCB = −30 V; IE = 0; Tj = 150 °C
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −4 V; IC = 0
−
−100
hFE
DC current gain
VCE = −2 V; IC = −100 mA
300
−
VCE = −2 V; IC = −500 mA
260
−
VCE = −2 V; IC = −1 000 mA
210
−
VCE = −2 V; IC = −2 000 mA
100
−
IC = −100 mA; IB = −1 mA
−
−100
mV
IC = −500 mA; IB = −50 mA
−
−110
mV
IC = −750 mA; IB = −15 mA
−
−225
mV
IC = −1 000 mA; IB = −50 mA
−
−225
mV
IC = −2 000 mA; IB = −200 mA
−
−350
mV
VCEsat
collector-emitter saturation
voltage
VBEsat
base-emitter saturation
voltage
IC = −2 000 mA; IB = −200 mA
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA
−
−0.75
V
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
40
pF
FT
transition frequency
IC = −100 mA; VCE = −10 V; f = 100 MHz 100
−
MHz
2002 Feb 28
4
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240Y
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2002 Feb 28
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PBSS5240Y
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Feb 28
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp7
Date of release: 2002 Feb 28
Document order number: 9397 750 09503