Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT50P10
Power MOSFET
-50A, -100V P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT50P10 is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance. It can also
withstand high energy in the avalanche.

FEATURES
* VDS= -100V
* ID = -50A
* RDS(ON) < 60mΩ @ VGS= -10V, ID= -20A
* High Switching Speed

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT50P10L-TA3-T
UTT50P10G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UTT50P10

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
VGSS
±20
V
Continuous
ID
-50
A
Drain Current
-90
A
Pulsed
IDM
Power Dissipation
PD
225
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJC
Junction to Case

RATINGS
0.55
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
TYP
ID=-250µA, VGS=0V
-100
VDS=0.8×Max.rating, VGS=0V, TJ=25°C
VDS=0.8×Max.rating, VGS=0V, TJ=125°C
VGS=+20V
VGS=-20V
Gate- Source Leakage
Forward
IGSS
Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
Static Drain-Source On-State
VGS=-10V, ID=-20A
RDS(ON)
Resistance
VGS=-4.5V, ID=-15A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=-50V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-50V, VGS=-10V, ID=-50A, RG=1Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
IF=-20A, VGS=0V, Pulse test, t≤300μs,
Drain-Source Diode Forward Voltage
VSD
duty cycle d≤2%
TJ=25°C, IF=-20A, VR=-50V,
Body Diode Reverse Recovery Time
tRR
di/dt=-100A/µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
MAX
UNIT
V
-1
-500
+100
-100
-1
-3
60
65
4200
250
110
µA
nA
nA
V
mΩ
mΩ
pF
pF
pF
80
76
740
200
130
130
900
400
ns
ns
ns
ns
-1.0
-1.5
V
80
120
ns
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UTT50P10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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