UNISONIC TECHNOLOGIES CO., LTD UT85N03 Power MOSFET 85 Amps, 30 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UT85N03 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suited for all low voltage applications. FEATURES * RDS(ON)<6 mΩ @VGS=10V * RDS(ON)<10mΩ @VGS=4.5V * Low Reverse Transfer Capacitance ( CRSS = Typical: 380 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT85N03L-TA3-T UT85N03G-TA3-T UT85N03L-TN3-T UT85N03G-TN3-T UT85N03L-TN3-R UT85N03G-TN3-R UT85N03L-TQ2-T UT85N03G-TQ2-T UT85N03L-TQ2-R UT85N03G-TQ2-R UT85N03L-TN3-T Package TO-220 TO-252 TO-252 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tape Reel Tube Tape Reel (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TA3: TO-220, TN3: TO-252, TQ2: TO-263 (3)Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-292.D UT85N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current ID 85 A Pulsed Drain Current IDM 350 A TO-220/TO-263 83 Total Power Dissipation PD W TO-252 56 Junction Temperature TJ +75 °C Strong Temperature TSTG -55 ~ +175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER TO-220/TO-263 Junction to Ambient TO-252 TO-220/TO-263 Junction to Case TO-252 SYMBOL RATINGS 62.5 110 1.8 2.7 θJA θJC UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL BVDSS TEST CONDITIONS VGS=0V, ID=250µA 30 ∆BVDSS/ ∆TJ ID=1mA, Reference to 25°C IDSS IGSS VDS=30V, VGS=0V VDS=0V, VGS= ±20V VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=45A VGS=4.5V, ID=30A VDS=10V, ID=30A RDS(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note) QG VDS=24V, VGS=4.5V, ID=30A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time (Note) tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=15V, RD=0.5Ω, RG=3.3Ω, ID=30A Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS =45A, VGS=0V Body Diode Reverse Recovery Time tRR IS=30A, VGS=0V, dIS/dt=100A/μs Body Diode Reverse Recovery Charge QRR Note: Pulse width≦300μs, Duty cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 0.018 1 V/°C 1 ±100 µA nA 3 6 10 V 32 mΩ S 2700 4200 550 380 pF pF pF 240 35 78 52 100 460 280 300 nC nC nC ns ns ns ns 1.3 V ns nC 28 10 2 of 3 QW-R502-292.D UT85N03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-292.D