SSF2300B

SSF2300B
20V N-Channel MOSFET
DESCRIPTION
D
The SSF2300B uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic Diagram
GENERAL FEATURES
● V DS = 20V,ID = 4.5A
R DS(ON) < 115mΩ @ VGS=2.5V
R DS(ON) < 60mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOT23-3 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2300B
SSF2300B
SOT23-3
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
20
V
Gate-Source Voltage
V GS
±10
V
ID
4.5
A
IDM
16
A
PD
1.2
W
TJ,TSTG
-55 To 150
℃
R θJA
140
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
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Page 1 of 4
Rev.1.1
SSF2300B
20V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
V DS=VGS,ID=250μA
0.95
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=3.1A
70
115
mΩ
VGS=4.5V, ID=3.6A
45
60
mΩ
VDS=10V,ID=4.5A
8
S
500
PF
250
PF
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
0.65
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
V DS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
90
PF
Turn-on Delay Time
td(on)
7
nS
Turn-on Rise Time
tr
55
nS
16
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDD=10V, R L = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
10
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
2.9
nC
V DS=10V,ID=4.2A,VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.3A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.1
SSF2300B
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
90%
Vout
toff
tf
td(off)
VOUT
90%
INVERTED
10%
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2: Switching Waveforms
Normalized Effective Transient
Thermal Impedance
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.1
SSF2300B
20V N-Channel MOSFET
SOT23-3 PACKAGE INFORMATION
NOTES：
1. Tolerance ±0.10mm (4 mil) unless otherwise specified
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.1