AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 12A RDS(ON) (at VGS=10V) < 0.55Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT12N60L & AOTF12N60L TO-220 Top View G D TO-220F D G G D S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N60 Drain-Source Voltage VDS 600 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF12N60 V 12 ID Units V 12* 9.7* 9.7 A Pulsed Drain Current C IDM 48 Avalanche Current C IAR 5.5 A Repetitive avalanche energy C EAR 450 mJ Single plused avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS 900 50 5 mJ dv/dt PD 50 W 2.2 0.4 -55 to 150 W/ oC °C 300 °C TL Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.6.0: June 2013 278 TJ, TSTG Symbol RθJA RθCS V/ns AOT12N60 65 AOTF12N60 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W www.aosmd.com Page 1 of 6 AOT12N60/AOTF12N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.65 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 4 4.5 nΑ V 0.46 0.55 Ω 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 20 S 0.72 1400 1751 2100 pF VGS=0V, VDS=25V, f=1MHz 130 164 200 pF 10 13 16 pF VGS=0V, VDS=0V, f=1MHz 2.5 3.3 5 Ω 40 50 nC 9 11 nC 17.9 22 nC 39 50 ns SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 VGS=10V, VDS=480V, ID=12A VGS=10V, VDS=300V, ID=12A, RG=25Ω 70 85 ns 122 150 ns 74 90 ns IF=12A,dI/dt=100A/µs,VDS=100V 311 373 Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 5.2 6.2 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=5.5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: June 2013 www.aosmd.com Page 2 of 6 AOT12N60/AOTF12N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V VDS=40V 25 -55°C 6.5V 10 6V ID(A) ID (A) 20 15 125°C 10 1 5 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 1.0 8 10 Normalized On-Resistance 3 0.8 RDS(ON) (Ω ) 6 VGS(Volts) Figure 2: Transfer Characteristics 0.6 VGS=10V 0.4 2.5 VGS=10V ID=6A 2 1.5 1 0.5 0 0.2 0 5 10 15 20 -100 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 1.2 40 1.0E-01 IS (A) BVDSS (Normalized) 1.0E+00 1.1 1 125°C 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 1.0E-05 0.8 -100 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.6.0: June 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT12N60/AOTF12N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=480V ID=12A 12 Ciss Capacitance (pF) VGS (Volts) 1000 9 6 Coss 100 10 3 Crss 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 60 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10µs 100µs 1ms 1 10ms DC 0.1 0.01 100µs 1ms 1 10ms 0.1s 1s DC TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs RDS(ON) limited 10 ID (Amps) RDS(ON) limited 10 ID (Amps) 100 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N60 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N60 (Note F) 14 Current rating ID(A) 12 10 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev.6.0: June 2013 www.aosmd.com Page 4 of 6 AOT12N60/AOTF12N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60 (Note F) Rev.6.0: June 2013 www.aosmd.com Page 5 of 6 AOT12N60/AOTF12N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.6.0: June 2013 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6