UNISONIC TECHNOLOGIES CO., LTD 10N65K-MT Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K-MT is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K-MT is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc. FEATURES * RDS(ON) < 1.0Ω @ VGS=10V, ID = 5.0A * High Switching Speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 10N65KL-TA3-T 10N65KG-TA3-T TO-220 10N65KL-TF3-T 10N65KG-TF3-T TO-220F 10N65KL-TF1-T 10N65KG-TF1-T TO-220F1 10N65KL-TF2-T 10N65KG-TF2-T TO-220F2 10N65KL-TF3T-T 10N65KG-TF3T-T TO-220F3 10N65KL-T2Q-T 10N65KG-T2Q-T TO-262 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube 1 of 7 QW-R502-B24.E 10N65K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-B24.E 10N65K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 10 A Continuous ID 10 A Drain Current 38 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 400 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.7 V/ns TO-220/TO-262 156 W TO-220F/TO-220F1 Power Dissipation PD 50 W TO-220F3 TO-220F2 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=8mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-262 TO-220F/TO-220F1 Junction to Case TO-220F3 TO-220F2 SYMBOL θJA RATING 62.5 0.8 UNIT °C/W °C/W θJC 2.5 °C/W 2.6 °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-B24.E 10N65K-MT Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS IG=100μA (Note1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω, Turn-On Rise Time tR V Turn-Off Delay Time tD(OFF) GS=0V (Note1, 2) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A Reverse Recovery Time trr VGS=0V, IS=10A, dIF/dt=100A/µs (Note1) Reverse Recovery Charge Qrr Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 2.0 1 100 -100 V µA nA nA 4.0 1.0 V Ω 750 1500 pF 130 180 pF 9 20 pF 30 9 8 65 80 200 90 510 4.7 50 80 150 260 150 nC nC nC ns ns ns ns 10 A 38 A 1.4 V ns µC 4 of 7 QW-R502-B24.E 10N65K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-B24.E 10N65K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-B24.E 10N65K-MT TYPICAL CHARACTERISTICS Drain Current, ID (A) Continuous Drain-Source Diode Forward Current, IS (A) Drain Current, ID (µA) Drain Current, ID (µA) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-B24.E