UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N65K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc. FEATURES * RDS(ON)<1.2Ω @ VGS=10V * High Switching Speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 10N65KL-TA3-T 10N65KG-TA3-T TO-220 10N65KL-TF3-T 10N65KG-TF3-T TO-220F 10N65KL-TF1-T 10N65KG-TF1-T TO-220F1 10N65KL-TF2-T 10N65KG-TF2-T TO-220F2 10N65KL-T2Q-T 10N65KG-T2Q-T TO-262 Note: Pin Assignment: G: Gate D: Drain S: Source 10N65KL-TA3-T Packing Tube Tube Tube Tube Tube (1) T: Tube (1)Packing Type (2)Package Type (3)Green Package Pin Assignment 1 2 3 G D S G D S G D S G D S G D S (2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2, T2Q: TO-262 (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-755.H 10N65K Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 10 A Continuous ID 10 A Drain Current 38 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 300 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262 156 W Power Dissipation TO-220F/TO-220F1 PD 50 W TO-220F2 52 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=6mH, IAS=10A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 9.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-262 Junction to Case TO-220F/TO-220F1 TO-220F2 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATING 65.2 0.8 2.5 2.4 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R02-755.H 10N65K Power MOSFET ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V Forward Gate-Source Leakage Current IGSS Reverse Breakdown Voltage Temperature ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=30V, ID =0.5A, Turn-On Rise Time tR RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, ID=1.3A, Gate-Source Charge QGS VGS=10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 1 100 -100 0.7 2.5 0.5 0.89 V µA nA nA V/°C 4.5 1.2 V Ω 1200 1700 pF 110 160 pF 10.5 16 pF 75 60 180 65 31.3 9.3 6.8 42 ns ns ns ns nC nC nC 1.4 V 10 A 38 A 3 of 6 QW-R02-755.H 10N65K Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R02-755.H 10N65K Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R02-755.H 10N65K Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 0 200 150 100 50 0 150 300 450 600 0 0 750 1 2 3 4 5 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Continuous Drain-Source Diode Forward Current, IS (A) Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R02-755.H