UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.3 Ω @ VGS = 10 V, ID = 4 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N65KL-TA3-T 8N65KG-TA3-T 8N65KL-TF3-T 8N65KG-TF3-T 8N65KL-TF1-T 8N65KG-TF1-T 8N65KL-TF2-T 8N65KG-TF2-T 8N65KL-TF3T-T 8N65KG-TF3T-T 8N65KL-TM3-T 8N65KG-TM3-T 8N65KL-TMS-T 8N65KG-TMS-T 8N65KL-TN3-R 8N65KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R209-054.C UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 2 of 7 QW-R209-054.C 8N65K-MTQ Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous ID 8 A Drain Current 32 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 350 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 147 W TO-220F/TO-220F1 48 W Power Dissipation PD TO-220F2/TO-220F3 TO-251/TO-251S 62 W TO-252 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=10.93mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2/TO-220F3 TO-251/TO-251S TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 62.5 0.85 UNIT °C/W °C/W 2.6 °C/W 2.0 °C/W 3 of 7 QW-R209-054.C 8N65K-MTQ Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 650 VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 4A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS IG=100μA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD =30V, VGS=10V, ID =0.5A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =8A Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 100 -100 V µA nA nA V/°C 4.0 1.4 V Ω 0.7 875 1000 88 120 8 25 pF pF pF 23 7.5 5 52 68 110 55 60 80 130 70 nC nC nC ns ns ns ns 8 A 32 A 1.4 V 4 of 7 QW-R209-054.C 8N65K-MTQ Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-054.C 8N65K-MTQ Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-054.C 8N65K-MTQ Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-054.C