SW10N65K

SW10N65K
N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252 MOSFET
TO-251N
TO-220F
TO-220
Features
BVDSS : 650V
TO-252
: 10A
ID






RDS(ON) :0.36 Ω
High ruggedness
Low RDS(ON) (Typ 0.36Ω)@VGS=10V
Low Gate Charge (Typ29nC)
Improved dv/dt Capability
1
100% Avalanche Tested
2
3
Application:LED, Charge, PC Power
2
1
2
1
3
2
1
3
2
3
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
1
2
3
4
Sales Type
SW P 10N65K
SW F 10N65K
SW NI 10N65K
SW D 10N65K
Marking
SW10N65K
SW10N65K
SW10N65K
SW10N65K
Package
TO-220
TO-220F
TO251N
TO-252
Packaging
TUBE
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO220 TO220F TO251N TO252
Drain to source voltage
Unit
650
V
Continuous drain current (@TC
=25oC)
10*
A
Continuous drain current (@TC
=100oC)
6.3*
A
40
A
±30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
270
mJ
EAR
Repetitive avalanche energy
(note 1)
60
mJ
(note 3)
5
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Peak diode recovery dv/dt
Total power dissipation (@TC
Derating factor above
=25oC)
25oC
178.6
25.5
96.2
104
W
1.43
0.2
0.77
0.83
W/oC
Operating junction temperature & storage temperature
-55 ~ + 150
oC
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
TO220 TO220F TO251N TO252
Rthjc
Thermal resistance, Junction to case
0.7
4.9
1.3
Rthja
Thermal resistance, Junction to ambient
53.7
48.7
80.0
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1.2
Oct. 2015. Rev. 5.0
Unit
oC/W
oC/W
1/7
SW10N65K
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
650
V
V/oC
0.65
VDS=650V, VGS=0V
1
uA
VDS=520V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
5
V
0.4
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=5A
0.36
Forward transconductance
VDS=30V, ID=5A
6.8
Gfs
2
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
3.9
td(on)
Turn on delay time
16
tr
td(off)
tf
Qg
Rising time
Turn off delay time
1015
VGS=0V, VDS=200V, f=1MHz
40
VDS=325V, ID=10A, RG=25Ω,
VGS=10V
(note 4,5)
pF
34
ns
55
Fall time
27
29
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=520V, VGS=10V, ID=10A
(note 4,5)
nC
7
14
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=10A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=10A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
10
A
40
A
1.4
V
266
ns
3.6
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =60mH, IAS =3A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
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Oct. 2015. Rev. 5.0
2/7
SW10N65K
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
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SW10N65K
Fig. 7. Maximum safe operating area(TO-220)
Fig. 8. Maximum safe operating area(TO-220F)
Fig. 9. Maximum safe operating area(TO-251N)
Fig. 10. Maximum safe operating area(TO-252)
Fig. 11. Capacitance Characteristics
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SW10N65K
Fig. 12. Transient thermal response curve(TO-220)
Fig. 13. Transient thermal response curve(TO-220F)
Fig. 14. Transient thermal response curve(TO-251N)
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Oct. 2015. Rev. 5.0
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SW10N65K
Fig. 15. Transient thermal response curve(TO-252)
Fig. 16. Gate charge test circuit & waveform
Fig. 17. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
VIN
10VIN
RGS
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
Oct. 2015. Rev. 5.0
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SW10N65K
Fig. 18. Unclamped Inductive switching test circuit & waveform
Fig. 19. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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Oct. 2015. Rev. 5.0
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