UNISONIC TECHNOLOGIES CO., LTD 2N70K-MT Power MOSFET 2A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70K-MT is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 5.5Ω@VGS = 10V , ID = 1.0 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N70KL-TF3-T 2N70KG-TF3-T 2N70KL-TF1-T 2N70KG-TF1-T 2N70KL-TF2-T 2N70KG-TF2-T 2N70KL-TF3T-T 2N70KG-TF3T-T 2N70KL-TM3-T 2N70KG-TM3-T 2N70KL-TMS-T 2N70KG-TMS-T 2N70KL-TN3-R 2N70KG-TN3-R 2N70KL-TND-R 2N70KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R205-008.B 2N70K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-008.B 2N70K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous ID 2.0 A Drain Current Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 100 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220F/TO-220F1 28 W TO-220F3 PD Power Dissipation TO-220F2 29 W TO-251/TO-251S 30 W TO-252/TO-252D Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=50mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220F/TO-220F1/ TO-220F2/TO-220F3 Junction to Ambient TO-251/TO-251S TO-252/TO-252D TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 °C/W 110 °C/W 4.46 °C/W 4.35 °C/W 4.24 °C/W θJA θJC 3 of 7 QW-R205-008.B 2N70K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Breakdown Voltage Temperature △BVDSS/△TJ ID = 250 μA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 700 10 100 -100 0.4 3.0 V μA nA nA V/°С 5.0 5.5 V Ω 258 31 4.6 pF pF pF 39.5 38.5 50 21 10.4 5.3 2.0 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A 4 of 7 QW-R205-008.B 2N70K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-008.B 2N70K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS VGS 90% 10% tD(ON) tD(OFF) tF tR Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform E AS = Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 BVDSS LI 2 2 AS BVDSS - VDD Fig. 4B Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-008.B 2N70K-MT Power MOSFET Drain Current, ID (mA) Continuous Drain-Source Current, ID (A) Drain Current, ID (μA) Drain Current, ID (μA) TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-008.B