link

Analog Power
AM1561CE
N & P-Channel 60-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
PRODUCT SUMMARY
rDS(on) (mΩ)
VDS (V)
250 @ VGS = 10V
60
330 @ VGS = 4.5V
700 @ VGS = -10V
-60
800 @ VGS = -4.5V
ID (A)
0.9
0.8
-0.6
-0.5
SC70-6
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
60
-60
VGS
Gate-Source Voltage
±20
±20
TA=25°C
0.9
-0.6
ID
Continuous Drain Current a
TA=70°C
0.7
-0.5
b
IDM
Pulsed Drain Current
5
-5
a
I
0.4
-0.3
Continuous Source Current (Diode Conduction)
S
T
=25°C
0.3
0.3
A
PD
Power Dissipation a
TA=70°C
0.21
0.21
TJ, Tstg
-55 to 150
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
415
RθJA
460
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM1561CE_1A
Analog Power
AM1561CE
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Symbol
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
VDS = 48 V, VGS = 0 V
(N-ch)
VDS = -48 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 10 V
(N-ch)
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 0.7 A
(N-ch)
VGS = 4.5 V, ID = 0.5 A (N-ch)
VGS = -10 V, ID = -0.5 A
(P-ch)
VGS = -4.5 V, ID = -0.4 A (P-ch)
VDS = 15 V, ID = 0.7 A
(N-ch)
VDS = -15 V, ID = -0.5 A (P-ch)
IS = 0.21 A, VGS = 0 V
(N-ch)
IS = -0.18 A, VGS = 0 V
(P-ch)
Min
Typ
Max
1
-1
±10
1
-1
1.2
-0.8
Unit
V
V
uA
uA
A
A
250
330
700
800
10
8
0.71
-0.77
mΩ
mΩ
S
S
V
V
Dynamic b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
N - Channel
VDS = 30 V, VGS = 4.5 V, ID = 0.7 A
N - Channel
VDD = 30 V, RL = 42.9 Ω, ID = 0.7 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P - Channel
VDS = -30 V, VGS = 4.5 V, ID = -0.5 A
P - Channel
VDD = -30 V, RL = 60 Ω, ID = -0.5 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
2
1.0
0.4
1.1
4
5
12
4
97
11
8
1.1
0.4
0.5
3
5
8
4
112
12
8
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AM1561CE_1A
Analog Power
AM1561CE
Typical Electrical Characteristics - N-channel
1.0
1
0.8
0.8
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
3V
0.6
3.5V
0.4
0.2
0.6
0.4
0.2
4V,4.5V,5V,6V,8V,10V
0
0.0
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
TJ = 25°C
ID = 0.7A
2.5
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
3
2
1.5
1
1
0.1
0.5
0
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
1
180
F = 1MHz
10V,8V,6V,4.5V,4V
160
0.8
140
Capacitance (pf)
ID - Drain Current (A)
5
3.5V
0.6
3V
0.4
120
Ciss
100
80
60
40
0.2
Coss
20
0
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM1561CE_1A
Analog Power
AM1561CE
Typical Electrical Characteristics - N-channel
2.5
VDS = 30V
ID = 1A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
2
1.5
1
0.5
0
-50
0
1
2
Qg - Total Gate Charge (nC)
0
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
30
PEAK TRANSIENT POWER (W)
10
10 uS
100 uS
ID Current (A)
-25
3
1 mS
1
10 mS
100 mS
1 SEC
10 SEC
0.1
100 SEC
1
DC
Idm limit
25
20
15
10
5
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.1
0.2
0.1
0.05
0.02
Single Pulse
RθJA(t) = r(t) + RθJA
RθJA = 460°C /W
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM1561CE_1A
Analog Power
AM1561CE
Typical Electrical Characteristics - P-channel
1.0
1.2
TJ = 25°C
0.8
1
0.9
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
1.1
3.5V
0.8
4V
0.7
0.6
4.5V,6V,8V,10V
0.6
0.4
0.5
0.2
0.4
0.0
0.3
0
0.2
0.4
0.6
0.8
ID-Drain Current (A)
0
1
1
1. On-Resistance vs. Drain Current
4
5
10
TJ = 25°C
ID = -0.5A
TJ = 25°C
3
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
3
2. Transfer Characteristics
4
2
1
0
1
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
160
1
F = 1MHz
140
10V,8V,6V,4.5V,4V
Ciss
0.8
120
0.6
Capacitance (pf)
ID - Drain Current (A)
2
VGS - Gate-to-Source Voltage (V)
3.5V
0.4
100
80
60
40
0.2
Coss
20
0
Crss
0
0
0.2
0.4
0.6
0.8
1
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
5
Publication Order Number:
DS_AM1561CE_1A
Analog Power
AM1561CE
Typical Electrical Characteristics - P-channel
10
2.5
ID = -0.5A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
VDS = -30V
8
6
4
2
2
1.5
1
0
0.5
0
1
2
3
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
10
PEAK TRANSIENT POWER (W)
25
10 uS
100 uS
ID Current (A)
0
1 mS
1
10 mS
100 mS
1 SEC
10 SEC
0.1
100 SEC
1
DC
Idm limit
Limited by
RDS
20
15
10
0
0.001
0.01
0.1
1
10
100
5
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
Single Pulse
P(pk)
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM1561CE_1A
Analog Power
AM1561CE
Package Information
© Preliminary
7
Publication Order Number:
DS_AM1561CE_1A