Analog Power AM1561CE N & P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 250 @ VGS = 10V 60 330 @ VGS = 4.5V 700 @ VGS = -10V -60 800 @ VGS = -4.5V ID (A) 0.9 0.8 -0.6 -0.5 SC70-6 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 TA=25°C 0.9 -0.6 ID Continuous Drain Current a TA=70°C 0.7 -0.5 b IDM Pulsed Drain Current 5 -5 a I 0.4 -0.3 Continuous Source Current (Diode Conduction) S T =25°C 0.3 0.3 A PD Power Dissipation a TA=70°C 0.21 0.21 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 415 RθJA 460 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM1561CE_1A Analog Power AM1561CE Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 48 V, VGS = 0 V (N-ch) VDS = -48 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 0.7 A (N-ch) VGS = 4.5 V, ID = 0.5 A (N-ch) VGS = -10 V, ID = -0.5 A (P-ch) VGS = -4.5 V, ID = -0.4 A (P-ch) VDS = 15 V, ID = 0.7 A (N-ch) VDS = -15 V, ID = -0.5 A (P-ch) IS = 0.21 A, VGS = 0 V (N-ch) IS = -0.18 A, VGS = 0 V (P-ch) Min Typ Max 1 -1 ±10 1 -1 1.2 -0.8 Unit V V uA uA A A 250 330 700 800 10 8 0.71 -0.77 mΩ mΩ S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss N - Channel VDS = 30 V, VGS = 4.5 V, ID = 0.7 A N - Channel VDD = 30 V, RL = 42.9 Ω, ID = 0.7 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -30 V, VGS = 4.5 V, ID = -0.5 A P - Channel VDD = -30 V, RL = 60 Ω, ID = -0.5 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 1.0 0.4 1.1 4 5 12 4 97 11 8 1.1 0.4 0.5 3 5 8 4 112 12 8 nC ns pF nC ns pF Publication Order Number: DS_AM1561CE_1A Analog Power AM1561CE Typical Electrical Characteristics - N-channel 1.0 1 0.8 0.8 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3V 0.6 3.5V 0.4 0.2 0.6 0.4 0.2 4V,4.5V,5V,6V,8V,10V 0 0.0 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) ID-Drain Current (A) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 TJ = 25°C ID = 0.7A 2.5 TJ = 25°C IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2 1.5 1 1 0.1 0.5 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 1 180 F = 1MHz 10V,8V,6V,4.5V,4V 160 0.8 140 Capacitance (pf) ID - Drain Current (A) 5 3.5V 0.6 3V 0.4 120 Ciss 100 80 60 40 0.2 Coss 20 0 Crss 0 0 0.1 0.2 0.3 0.4 0.5 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM1561CE_1A Analog Power AM1561CE Typical Electrical Characteristics - N-channel 2.5 VDS = 30V ID = 1A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 2 1.5 1 0.5 0 -50 0 1 2 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 30 PEAK TRANSIENT POWER (W) 10 10 uS 100 uS ID Current (A) -25 3 1 mS 1 10 mS 100 mS 1 SEC 10 SEC 0.1 100 SEC 1 DC Idm limit 25 20 15 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.1 0.2 0.1 0.05 0.02 Single Pulse RθJA(t) = r(t) + RθJA RθJA = 460°C /W P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM1561CE_1A Analog Power AM1561CE Typical Electrical Characteristics - P-channel 1.0 1.2 TJ = 25°C 0.8 1 0.9 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 1.1 3.5V 0.8 4V 0.7 0.6 4.5V,6V,8V,10V 0.6 0.4 0.5 0.2 0.4 0.0 0.3 0 0.2 0.4 0.6 0.8 ID-Drain Current (A) 0 1 1 1. On-Resistance vs. Drain Current 4 5 10 TJ = 25°C ID = -0.5A TJ = 25°C 3 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 4 2 1 0 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 160 1 F = 1MHz 140 10V,8V,6V,4.5V,4V Ciss 0.8 120 0.6 Capacitance (pf) ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 3.5V 0.4 100 80 60 40 0.2 Coss 20 0 Crss 0 0 0.2 0.4 0.6 0.8 1 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AM1561CE_1A Analog Power AM1561CE Typical Electrical Characteristics - P-channel 10 2.5 ID = -0.5A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) VDS = -30V 8 6 4 2 2 1.5 1 0 0.5 0 1 2 3 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 10 PEAK TRANSIENT POWER (W) 25 10 uS 100 uS ID Current (A) 0 1 mS 1 10 mS 100 mS 1 SEC 10 SEC 0.1 100 SEC 1 DC Idm limit Limited by RDS 20 15 10 0 0.001 0.01 0.1 1 10 100 5 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 Single Pulse P(pk) t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM1561CE_1A Analog Power AM1561CE Package Information © Preliminary 7 Publication Order Number: DS_AM1561CE_1A