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Analog Power
AM1580CE
N & P-Channel 80-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
PRODUCT SUMMARY
rDS(on) (mΩ)
VDS (V)
740 @ VGS = 10V
80
810 @ VGS = 4.5V
3300 @ VGS = -10V
-80
3400 @ VGS = -4.5V
ID (A)
0.52
0.50
-0.25
-0.24
SC70-6
Typical Applications:
• LED Inverter Circuits
• DC/DC Conversion Circuits
• Motor drives
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
80
-80
VGS
Gate-Source Voltage
±20
±20
TA=25°C
0.52
-0.25
ID
Continuous Drain Current a
TA=70°C
0.43
-0.21
b
IDM
Pulsed Drain Current
2
-2
a
I
0.4
-0.4
Continuous Source Current (Diode Conduction)
S
T
=25°C
0.3
0.3
A
PD
Power Dissipation a
TA=70°C
0.21
0.21
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
415
RθJA
460
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Preliminary
1
Publication Order Number:
DS_AM1580CE_1A
Analog Power
AM1580CE
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage
Symbol
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-Resistance a
rDS(on)
Forward Transconductance a
gfs
Diode Forward Voltage a
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Preliminary
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
VDS = 64 V, VGS = 0 V
(N-ch)
VDS = -64 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 10 V
(N-ch)
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 0.44 A (N-ch)
VGS = 4.5 V, ID = 0.35 A (N-ch)
VGS = -10 V, ID = -0.2 A (P-ch)
VGS = -4.5 V, ID = -0.16 A (P-ch)
VDS = 15 V, ID = 0.44 A (N-ch)
VDS = -15 V, ID = -0.2 A (P-ch)
IS = 0.2 A, VGS = 0 V
(N-ch)
IS = -0.2 A, VGS = 0 V
(P-ch)
Dynamic b
N - Channel
VDS = 40 V, VGS = 4.5 V,
ID = 0.44 A
N - Channel
VDS = 40 V, RL = 91 Ω, ID = 0.44 A,
VGEN = 10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 Mhz
P - Channel
VDS = -40 V, VGS = -4.5 V,
ID = -0.2 A
P - Channel
VDS = -40 V, RL = 200 Ω, ID = -0.2 A,
VGEN = -10 V, RGEN = 6 Ω
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 Mhz
2
Min
Typ
Max
1
-1
±10
1
-1
0.8
-0.4
Unit
V
V
uA
uA
A
A
740
810
3300
3400
9
7
0.76
-0.82
1.6
0.6
1.0
3
5
12
4
77
24
14
2.1
0.7
1.0
4
6
9
3
100
24
13
mΩ
mΩ
S
S
V
V
nC
ns
pF
nC
ns
pF
Publication Order Number:
DS_AM1580CE_1A
Analog Power
AM1580CE
Typical Electrical Characteristics - N-channel
0.5
1.5
0.4
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
TJ = 25°C
1
4V
4.5V
0.5
6V,8V,10V
0.3
0.2
0.1
0.0
0
0
0.1
0.2
0.3
0.4
0
0.5
1
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
3
4
5
2. Transfer Characteristics
1
1.5
TJ = 25°C
ID = 0.44A
TJ = 25°C
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
1
0.5
0
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
0.5
150
F = 1MHz
ID - Drain Current (A)
0.3
Capacitance (pf)
10V,8V,6V,4.5V
0.4
4V
0.2
100
Ciss
50
Coss
0.1
Crss
0
0
0
0.1
0.2
0.3
0.4
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM1580CE_1A
Analog Power
AM1580CE
Typical Electrical Characteristics - N-channel
2
VDS = 40V
ID = 0.44A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
0
1.5
1
0.5
0
1
2
3
4
-50
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
15
PEAK TRANSIENT POWER (W)
10
10 uS
100 uS
ID Current (A)
0
1 mS
1
10 mS
100 mS
1 SEC
10 SEC
0.1
100 SEC
DC
1
Idm limit
10
5
Limited by
RDS
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
0.1
RθJA = 460 °C /W
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
Preliminary
4
Publication Order Number:
DS_AM1580CE_1A
Analog Power
AM1580CE
Typical Electrical Characteristics - P-channel
0.5
TJ = 25°C
0.4
3.5
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
4
3V
3
3.5V,4V,4.5V,6V,8V,10V
0.3
0.2
0.1
0.0
2.5
0
0.1
0.2
0.3
0.4
ID-Drain Current (A)
0
0.5
1
1. On-Resistance vs. Drain Current
3
4
2. Transfer Characteristics
1
4
TJ = 25°C
ID = -0.2A
TJ = 25°C
3
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
2
VGS - Gate-to-Source Voltage (V)
2
1
0
0.1
0.01
0
2
4
6
8
10
0
VGS - Gate-to-Source Voltage (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
150
0.5
F = 1MHz
10V,8V,6V,4.5V,4V,3.5V
Ciss
Capacitance (pf)
ID - Drain Current (A)
0.4
3V
0.3
0.2
100
50
Coss
0.1
Crss
0
0
0
0.5
1
1.5
2
0
5
10
15
20
1000
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
Preliminary
6. Capacitance
5
Publication Order Number:
DS_AM1580CE_1A
Analog Power
AM1580CE
Typical Electrical Characteristics - P-channel
2
VDS = -40V
ID = -0.2A
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
8
6
4
2
1.5
1
0.5
0
0
1
2
3
-50
4
-25
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
Qg - Total Gate Charge (nC)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
10
PEAK TRANSIENT POWER (W)
15
10 uS
100 uS
ID Current (A)
0
1 mS
1
10 mS
100 mS
1 SEC
10 SEC
0.1
100 SEC
DC
1
Idm limit
Limited by
RDS
10
0
0.001
0.01
0.1
1
10
100
5
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
0.1
RθJA = 460 °C /W
0.05
0.02
P(pk)
Single Pulse
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
Preliminary
6
Publication Order Number:
DS_AM1580CE_1A
Analog Power
AM1580CE
Package Information
Preliminary
7
Publication Order Number:
DS_AM1580CE_1A