Analog Power AM1590CE N & P-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (Ω) VDS (V) 1.2 @ VGS = 10V 100 1.5 @ VGS = 4.5V 5.5 @ VGS = -10V -100 6 @ VGS = -4.5V ID (A) 0.42 0.37 -0.20 -0.19 SC70-6 Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 100 -100 VGS Gate-Source Voltage ±20 ±20 TA=25°C 0.42 -0.20 ID Continuous Drain Current a TA=70°C 0.35 -0.16 b IDM Pulsed Drain Current 2 -1 a I 0.37 -0.35 Continuous Source Current (Diode Conduction) S T =25°C 0.3 0.3 A PD Power Dissipation a TA=70°C 0.21 0.21 TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 415 RθJA 460 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM1590CE_1A Analog Power AM1590CE Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V (N-ch) VDS = -80 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 0.3 A (N-ch) VGS = 4.5 V, ID = 0.24 A (N-ch) VGS = -10 V, ID = -0.15 A (P-ch) VGS = -4.5 V, ID = -0.12 A (P-ch) VDS = 15 V, ID = 0.3 A (N-ch) VDS = -15 V, ID = -0.15 A (P-ch) IS = 0.18 A, VGS = 0 V (N-ch) IS = -0.17 A, VGS = 0 V (P-ch) Min Typ Max 1 -1 ±10 1 -1 0.7 -0.3 Unit V V uA uA A A 1.2 1.5 5.5 6 11 10 0.75 -0.82 Ω Ω S S V V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss N - Channel VDS = 50 V, VGS = 4.5 V, ID = 0.3 A N - Channel VDS = 50 V, RL = 166.7 Ω, ID = 0.3 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 Mhz P - Channel VDS = -50 V, VGS = -4.5 V, ID = -0.15 A P - Channel VDS = -50 V, RL = 333.4 Ω, ID = -0.15 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 Mhz 2 1.2 0.2 0.8 3 4 13 5 62 19 9 1.2 0.4 0.5 5 5 10 5 84 18 9 nC ns pF nC ns pF Publication Order Number: DS_AM1590CE_1A Analog Power AM1590CE Typical Electrical Characteristics - N-channel 3 0.5 0.4 2 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3.5V 1 4V,4.5V,6V,8V,10V 0.3 0.2 0.1 0.0 0 0 0.1 0.2 0.3 ID-Drain Current (A) 0 0.4 1 1. On-Resistance vs. Drain Current 3 4 5 2. Transfer Characteristics 1 0.4 TJ = 25°C 0.35 TJ = 25°C ID = 0.3A 0.3 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 0.25 0.2 0.15 0.1 0.1 0.05 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 0.4 150 F = 1MHz 0.3 3.5V Capacitance (pf) ID - Drain Current (A) 10V,8V,6V,4.5V,4V 0.2 100 Ciss 50 0.1 Coss Crss 0 0 0 0.2 0.4 0.6 0.8 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM1590CE_1A Analog Power AM1590CE Typical Electrical Characteristics - N-channel 2.5 VDS = 50V ID = 0.3A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 0 2 1.5 1 0.5 0 1 2 3 -50 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 15 PEAK TRANSIENT POWER (W) 10 10 uS 100 uS ID Current (A) 0 1 mS 1 10 mS 100 mS 1 SEC 10 SEC 0.1 100 SEC 1 DC Idm limit 10 5 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 0.1 RθJA = 460 °C /W 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM1590CE_1A Analog Power AM1590CE 10 0.5 8 0.4 TJ = 25°C 6 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - P-channel 3.5V 4V,4.5V,6V,8V,10V 4 0.3 0.2 0.1 2 0.0 0 0 0.1 0.2 0.3 0.4 ID-Drain Current (A) 0 0.5 1 1. On-Resistance vs. Drain Current 4 5 1 TJ = 25°C ID = -0.15A TJ = 25°C 15 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 3 2. Transfer Characteristics 20 10 5 0 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 120 0.5 F = 1MHz 10V,8V,6V,4.5V,4V 100 Capacitance (pf) 0.4 ID - Drain Current (A) 2 VGS - Gate-to-Source Voltage (V) 3.5V 0.3 0.2 Ciss 80 60 40 Coss 0.1 20 0 Crss 0 0 1 2 3 4 0 5 10 15 20 1000 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 6. Capacitance 5 Publication Order Number: DS_AM1590CE_1A Analog Power AM1590CE Typical Electrical Characteristics - P-channel 2.5 VDS = -50V ID = - RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 6 4 2 2 1.5 1 0.5 0 0 1 2 -50 3 -25 25 50 75 100 125 150 TJ -JunctionTemperature(°C) Qg - Total Gate Charge (nC) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 10 PEAK TRANSIENT POWER (W) 15 10 uS 100 uS ID Current (A) 0 1 mS 1 10 mS 100 mS 1 SEC 10 SEC 0.1 100 SEC 1 DC Idm limit Limited by RDS 10 0 0.001 0.01 0.1 1 10 100 5 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA 0.1 RθJA = 460 °C /W 0.05 0.02 P(pk) Single Pulse t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM1590CE_1A Analog Power AM1590CE Package Information © Preliminary 7 Publication Order Number: DS_AM1590CE_1A