DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Jun 8 2004 Nov 08 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current IC: 4 A VCEO collector-emitter voltage −80 V IC collector current (DC) −4 A ICM peak collector current −10 A RCEsat equivalent on-resistance 75 mΩ • High efficiency leading to less heat generation. APPLICATIONS PARAMETER MAX. UNIT • Medium power peripheral drivers (e.g. fans and motors) PINNING • Strobe flash units for digital still cameras and mobile phones PIN • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion DESCRIPTION 1 emitter 2 collector 3 base • Battery chargers. DESCRIPTION PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package. NPN complement: PBSS4480X. 2 3 MARKING TYPE NUMBER MARKING CODE(1) PBSS5480X 1 *1Z 3 2 1 sym079 Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5480X 2004 Nov 08 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −80 V VCEO collector-emitter voltage open base − −80 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) note 1 − −4 A ICM peak collector current tp ≤ 1 ms or limited by Tj(max) − −10 A ICRP repetitive peak collector current tp ≤ 10 ms; δ ≤ 0.1 − −6 A IB base current (DC) − −1 A IBM peak base current tp ≤ 1 ms − −2 A Ptot total power dissipation Tamb ≤ 25 °C notes 2 and 3 − 2.5 W note 3 − 0.55 W note 4 − 1 W note 1 − 1.4 W note 5 − 1.6 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 2. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.1. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated. 2004 Nov 08 3 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS5480X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 08 4 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 5 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 6 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −80 V; IE = 0 A − − −100 nA VCB = −80 V; IE = 0 A; Tj = 150 °C − − −50 μA ICES collector-emitter cut-off current VCE = −60 V; VBE = 0 V − − −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 nA hFE DC current gain VCE = −2 V; IC = −0.5 A 200 300 − VCE = −2 V; IC = −1 A; note 1 180 280 − VCE = −2 V; IC = −2 A; note 1 150 240 − VCE = −2 V; IC = −4 A; note 1 80 150 − − −35 −55 mV IC = −1 A; IB = −50 mA − −70 −105 mV IC = −2 A; IB = −40 mA − −170 −250 mV IC = −4 A; IB = −200 mA; note 1 − −220 −340 mV IC = −5 A; IB = −500 mA; note 1 − −250 −380 mV VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −50 mA RCEsat equivalent on-resistance IC = −5 A; IB = −500 mA; note 1 − 50 75 mΩ VBEsat base-emitter saturation voltage IC = −0.5 A; IB = −50 mA − −770 −850 mV IC = −1 A; IB = −50 mA − −810 −900 mV IC = −1 A; IB = −100 mA; note 1 − −810 −900 mV IC = −4 A; IB = −400 mA; note 1 − −930 −1000 mV VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A − −760 −850 mV fT transition frequency IC = −0.1 A; VCE = −10 V; f = 100 MHz 100 125 − MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 60 90 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Nov 08 7 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 001aaa753 −10 (4) (3) (2) IC (A) −8 VBE (V) (5) (6) (7) −0.8 (8) −6 001aaa754 −1.2 (1) (1) (9) (2) (10) −4 (3) −0.4 −2 0 −0.4 0 (1) (2) (3) (4) IB = −300 mA. IB = −270 mA. IB = −240 mA. IB = −210 mA. Fig.6 −0.8 −1.2 (5) IB = −180 mA. (6) IB = −150 mA. (7) IB = −120 mA. 0 −10−1 −1.6 −2 VCE (V) (8) IB = −90 mA. (9) IB = −60 mA. (10) IB = −30 mA. −10 −102 −103 −104 IC (mA) VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Collector current as a function of collector-emitter voltage; typical values. 001aaa755 600 −1 Fig.7 Base-emitter voltage as a function of collector current; typical values. 103 001aaa756 RCEsat (Ω) hFE 102 (1) 400 10 (2) 1 200 (3) 10−1 (1) (2) 0 −10−1 −1 −10 −102 10−2 −10−1 −103 −104 IC (mA) VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. −1 (3) Tamb = −55 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.8 Fig.9 DC current gain as a function of collector current; typical values. 2004 Nov 08 8 −10 −102 (3) −103 −104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X 001aaa757 −1 001aaa758 −1 VCEsat (V) VCEsat (V) −10−1 (1) (2) −10−1 −10−2 (3) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −10−3 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. 001aaa759 −1.2 001aaa760 −1.2 VBEsat (V) VBEon (V) (1) −0.8 −0.8 (2) (3) −0.4 0 −10−1 −0.4 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C; VCE = −2 V. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.12 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 08 Fig.13 Base-emitter turn-on voltage as a function of collector current; typical values. 9 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X Reference mounting conditions 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm MLE322 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 08 10 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet 80 V, 4 A PNP low VCEsat (BISS) transistor PBSS5480X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 08 12 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp13 Date of release: 2004 Nov 08 Document order number: 9397 750 13891