Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS5540X
40 V, 5 A
PNP low VCEsat (BISS) transistor
Product data sheet
Supersedes data of 2004 Jan 15
2004 Nov 04
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
SYMBOL
• High collector current capability: IC and ICM
VCEO
collector-emitter voltage −40
IC
collector current (DC)
−4
A
ICRP
repetitive peak collector
current
−5
A
RCEsat
equivalent
on-resistance
75
mΩ
• High efficiency leading to less heat generation.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
PARAMETER
MAX.
UNIT
V
PINNING
• Strobe flash units
PIN
• Medium power driver (e.g. relays, buzzers and motors).
DESCRIPTION
PNP low VCEsat transistor in a medium power SOT89
(SC-62) package.
DESCRIPTION
1
emitter
2
collector
3
base
NPN complement: PBSS4540X.
MARKING
2
MARKING CODE(1)
TYPE NUMBER
PBSS5540X
3
*1G
Note
1
3
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2
1
sym079
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS5540X
2004 Nov 04
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−6
V
ICM
peak collector current
tp ≤ 1 ms
−
−10
A
ICRP
repetitive peak collector current
tp ≤ 10 ms; δ ≤ 0.2
−
−5
A
IC
collector current (DC)
−
−4
A
IBM
peak base current
−
−2
A
IB
base current (DC)
−
−1
A
Ptot
total power dissipation
tp ≤ 10 ms; δ ≤ 0.2; note 1 −
tp ≤ 1 ms
Tamb ≤ 25 °C
2.5
W
note 1
−
0.55
W
note 2
−
1
W
note 3
−
1.4
W
note 4
−
1.6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.
2004 Nov 04
3
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
001aaa229
1600
Ptot
(mW)
PBSS5540X
(1)
1200
(2)
800
(3)
400
0
−50
0
50
100
150
200
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 04
4
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
Rth(j-s)
VALUE
UNIT
notes 1 and 2
50
K/W
note 2
225
K/W
note 3
125
K/W
note 4
90
K/W
note 5
80
K/W
16
K/W
in free air
thermal resistance from junction to
soldering point
Notes
1. Pulse test: tp ≤ 10 ms; δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.
006aaa232
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
1
10−1
10−5
(10)
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
006aaa233
103
Zth
(K/W)
(1)
102
(2)
(3)
(5)
(4)
(6)
10
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa234
103
Zth
(K/W)
102
(1)
(2)
(3)
(4)
10
(5)
(6)
(7)
(8)
(9)
1
(10)
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
6
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCB = −30 V; IE = 0 A
−
−
−100
nA
VCB = −30 V; IE = 0 A;
Tj = 150 °C
−
−
−50
μA
nA
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
−
−100
hFE
DC current gain
VCE = −2 V; IC = −0.5 A
250
−
−
VCE = −2 V; IC = −1 A;
note 1
200
−
−
VCE = −2 V; IC = −2 A;
note 1
150
−
−
VCE = −2 V; IC = −5 A;
note 1
50
−
−
IC = −0.5 A; IB = −5 mA
−
−
120
mV
IC = −1 A; IB = −10 mA
−
−
170
mV
IC = −2 A; IB = −200 mA
−
−
160
mV
IC = −4 A; IB = −200 mA;
note 1
−
−
340
mV
IC = −5 A; IB = −500 mA;
note 1
−
−
375
mV
VCEsat
collector-emitter saturation
voltage
RCEsat
equivalent on-resistance
IC = −5 A; IB = −500 mA;
note 1
−
45
75
mΩ
VBEsat
base-emitter saturation
voltage
IC = −4 A; IB = −200 mA;
note 1
−
−
−1.1
V
IC = −5 A; IB = −500 mA;
note 1
−
−
−1.2
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −2 A
−
−
−1.0
V
fT
transition frequency
VCE = −10 V; IC = −0.1 A;
f = 100 MHz
60
−
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
−
−
105
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 04
7
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
001aaa157
−8
IC
(A)
001aaa158
−1.2
(1)
VBE
(V)
(2)
−6
(3)
(1)
−0.8
(2)
(4)
−4
(3)
(5)
−0.4
−2
0
−0.5
0
(1) IB1 = −11 mA.
(2) IB2 = −22 mA.
−1
−1.5
VCE (V)
0
−10−1
−2
(4) IB4 = −44 mA.
(5) IB5 = −55 mA.
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V.
(3) IB3 = −33 mA.
(1) Tamb = −55 °C.
Fig.6
Fig.7
Base-emitter voltage as a function of
collector current; typical values.
102
001aaa160
Collector current as a function of
collector-emitter voltage; typical values.
001aaa159
1000
hFE
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
RCEsat
(Ω)
800
10
600
(1)
1
(2)
400
(2)
(1)
10−1
(3)
200
(3)
0
−10−1
−1
−10
−102
10−2
−10−1
−103
−104
IC (mA)
VCE = −2 V.
(1) Tamb = 100 °C.
Fig.8
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(2) Tamb = 25 °C.
(1) Tamb = 100 °C.
(3) Tamb = −55 °C.
DC current gain as a function of collector
current; typical values.
2004 Nov 04
−1
Fig.9
8
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Equivalent on-resistance as a function of
collector current; typical values.
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
001aaa161
−1
001aaa162
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(1)
(2)
(2)
−10−2
−10−3
−10−1
−1
−10
(3)
−102
(3)
−10−2
−10−3
−10−1
−103
−104
IC (mA)
IC/IB = 20.
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IC/IB = 100.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
(3) IC/IB = 10.
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
001aaa163
−10
(2) IC/IB = 50.
001aaa164
−1.2
VBE
(V)
VBEsat
(V)
−0.8
−1
(1)
(2)
−0.4
(3)
−10−1
10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
(2) Tamb = 25 °C.
−102
−103
−104
IC (mA)
(3) Tamb = 100 °C.
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 04
−10
Tamb = 25 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
−1
Fig.13 Base-emitter voltage as a function of
collector current; typical values.
9
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
Reference mounting conditions
32 mm
handbook, halfpage
32 mm
10 mm
40
mm
2.5 mm
40 mm
1 mm
10 mm
3 mm
2.5 mm
2.5 mm
1 mm
1 mm
0.5 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
MLE322
001aaa234
Fig.15 FR4, mounting pad for collector 1 cm2.
Fig.14 FR4, standard footprint.
32 mm
30 mm
20
mm
40
mm
2.5 mm
1 mm
0.5 mm
5 mm
3.96 mm
1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 04
10
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Nov 04
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
11
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
40 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5540X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 04
12
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/03/pp13
Date of release: 2004 Nov 04
Document order number: 9397 750 13893