DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4520X 20 V, 5 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2004 Jun 11 2004 Nov 08 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X FEATURES QUICK REFERENCE DATA • High hFE and low VCEsat at high current operation SYMBOL • High collector current capability: IC maximum 5 A VCEO collector-emitter voltage 20 V IC collector current (DC) 5 A ICM peak collector current 10 A RCEsat equivalent on-resistance 44 mΩ • Higher efficiency leading to less heat generation. APPLICATIONS PARAMETER MAX. UNIT • Medium power peripheral drivers, e.g. fans and motors PINNING • Strobe flash units for DSC and mobile phones • Inverter applications, e.g. TFT displays PIN DESCRIPTION • Power switch for LAN and ADSL systems 1 emitter • Medium power DC-to-DC conversion 2 collector • Battery chargers. 3 base DESCRIPTION NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5520X. 2 MARKING 3 TYPE NUMBER MARKING PBSS4520X CODE(1) 1 *1F 3 2 1 sym042 Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4520X 2004 Nov 08 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 5 A ICRM repetitive peak collector current notes 1 and 2 − 7 A ICM peak collector current tp ≤ 1 ms − 10 A IB base current (DC) − 1 A IBM peak base current tp ≤ 1 ms − 2 A Ptot total power dissipation Tamb ≤ 25 °C notes 1 and 2 − 2.5 W note 2 − 0.55 W note 3 − 1 W note 4 − 1.4 W note 5 − 1.6 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Nov 08 3 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS4520X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 08 4 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ Š≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 5 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 08 6 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = 20 V; IE = 0 A − − 100 nA VCB = 20 V; IE = 0 A; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA ICES collector-emitter cut-off current VCE = 20 V; VBE = 0 V − − 100 nA hFE DC current gain VCE = 2 V IC = 0.5 A 300 450 − IC = 1 A; note 1 300 440 − IC = 2 A; note 1 250 420 − IC = 5 A; note 1 200 380 − IC = 0.5 A; IB = 5 mA − 35 50 mV IC = 1 A; IB = 10 mA − 50 70 mV IC = 2.5 A; IB = 125 mA; note 1 − 85 120 mV IC = 4 A; IB = 200 mA; note 1 − 130 180 mV VCEsat collector-emitter saturation voltage IC = 5 A; IB = 500 mA; note 1 − 160 220 mV RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA; note 1 − 32 44 mΩ VBEsat base-emitter saturation voltage IC = 4 A; IB = 200 mA; note 1 − 0.9 1.05 V IC = 5 A; IB = 500 mA; note 1 − 0.96 1.1 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A − 0.74 0.85 V fT transition frequency IC = 100 mA; VCE = 10 V; f = 100 MHz 100 125 − MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz − 90 110 pF Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Nov 08 7 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 001aaa746 1000 001aaa750 1.2 hFE VBE (V) 800 0.8 (1) 600 (2) 400 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. Tamb = 25 °C. Fig.6 Fig.7 DC current gain as a function of collector current; typical values. 001aaa747 103 1 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. 001aaa748 103 VCEsat (mV) VCEsat (mV) 102 102 (1) (2) (1) (2) 10 (3) (3) 10 1 1 10−1 1 10 102 10−1 10−1 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = −55 °C. (3) Tamb = 25 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 08 8 1 10 102 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X 001aaa749 1.2 001aaa878 1.2 VBEsat (V) VBE (V) (1) 0.8 (1) 0.8 (2) (2) (3) (3) 0.4 0.4 0 10−1 1 102 10 0 10−1 103 104 IC (mA) 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. 001aaa745 250 IC (mA) (6) (5) (4) (3) (2) 001aaa879 102 RCEsat (Ω) (1) 200 10 (7) 150 (8) 1 (9) 100 (10) 10−1 50 (1) (2) 10−2 0 0 Tamb = 25 °C. (1) IB = 5 mA. (2) IB = 4.5 mA. (3) IB = 4 mA. 0.4 0.8 1.2 (4) IB = 3.5 mA. (5) IB = 3 mA. (6) IB = 2.5 mA. (7) IB = 2 mA. 10−1 1.6 2 VCE (V) 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (8) IB = 1.5 mA. (9) IB = 1 mA. (10) IB = 0.5 mA. Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 08 1 (3) Fig.13 Equivalent on-resistance as a function of collector current; typical values. 9 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X Reference mounting conditions 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm MLE322 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 08 10 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 08 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet 20 V, 5 A NPN low VCEsat (BISS) transistor PBSS4520X DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Nov 08 12 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 08 Document order number: 9397 750 13884