UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N80Z is universally applied in high efficiency switch mode power supply. FEATURES * RDS(on) < 6.3Ω @ VGS=10V, ID=1.2A * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80ZL-TA3-T 2N80ZG-TA3-T 2N80ZL-TF3-T 2N80ZG-TF3-T 2N80ZL-TF1-T 2N80ZG-TF1-T 2N80ZL-TF2-T 2N80ZG-TF2-T 2N80ZL-TM3-R 2N80ZG-TM3-R 2N80ZL-TN3-R 2N80ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R502-828.B 2N80Z Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-282.B 2N80Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 2.4 A Continuous ID 2.4 A Drain Current 9.6 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 180 mJ Avalanche Energy 8.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220 65 W TO-220F/TO-220F1 Power Dissipation PD 24 W TO-220F2 TO-251/TO-252 43 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-251/TO-252 TO-220 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS UNIT 62.5 °C/W 110 1.92 °C/W °C/W 5.2 °C/W 2.85 °C/W 3 of 7 QW-R502-282.B 2N80Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V 800 △BVDSS/△TJ Reference to 25°C, ID=250µA VDS=800V, VGS=0V IDSS VDS=640V, TC=125°C VGS=+20V, VDS=0V IGSS VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.2A Forward Transconductance (Note 1) gFS VDS=50V, ID=1.2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=640V, Gate to Source Charge QGS ID=2.4A (Note 1,2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=400V, ID=2.4A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=2.4A, VGS=0V Reverse Recovery Time (Note 1) tRR IS=2.4A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 1) QRR Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V V/°C 0.9 10 100 5 -5 3.0 µA µA µA 5.0 6.3 V Ω S 425 45 5.5 550 60 7.0 pF pF pF 12 2.6 6.0 12 30 25 28 15 35 70 60 65 nC nC nC ns ns ns ns 2.4 A 9.6 A 1.4 V ns µC 4.8 2.65 480 2.0 4 of 7 QW-R502-282.B 2N80Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-282.B 2N80Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-282.B 2N80Z Preliminary Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-282.B