FDB8878 N-Channel Logic Level PowerTrench® MOSFET 30V, 48A, 14mΩ General Descriptions Features rDS(ON) = 14mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 18mΩ, VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low rDS(ON) either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge rDS(ON) and fast switching speed. High power and current handling capability RoHS Compliant D GATE G SOURCE TO-263AB DRAIN (FLANGE) D FDB SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 4.5V) Pulsed (Note 4) EAS Single Pulse Avalanche Energy (Note 1) PD Power dissipation TJ, TSTG Operating and Storage Temperature 48 A 42 A 170 A L = 1mH, IAS = 11A 60 L = 0.03mH,IAS = 38A 21 mJ 47.3 W o -55 to 175 C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Note 2) RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 3.7 43 oC/W o C/W Package Marking and Ordering Information Device Marking FDB8878 Device FDB8878 ©2005 Fairchild Semiconductor Corporation FDB8878 Rev. A Package TO-263 1 Reel Size 13” Tape Width 24mm Quantity 800 units www.fairchildsemi.com FDB8878 N-Channel PowerTrench® MOSFET November 2005 Symbol Parameter Test Conditions Min Typ Max Units 30 - - V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temp. Coefficient ID = 250µA, Referenced to 25oC IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current VDS = 24V VGS = 0V TA = 150oC VGS = ±20V mV/oC 21 - - 1 - - 250 - - ±100 nA 1.2 1.7 2.5 V µA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(TH) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC rDS(ON) Drain to Source On Resistance mV/oC -5 ID = 40A, VGS = 10V - 12 14 ID = 36A, VGS = 4.5V - 15 18 ID = 40, VGS = 10V, TA = 175oC - 19 21 - 927 1235 pF - 188 250 pF - 117 175 pF mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance f = 1MHz Qg(TOT) Total Gate Charge at 10V Qg(5) Total Gate Charge at 5V Qgs Gate to Source Gate Charge VGS = 0V to 10V VDD = 15V VGS = 0V to 5V ID = 40A Ig = 1.0mA Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz Ω 3.0 - 17.1 23 nC - 9.2 12 nC - 2.6 - nC Gate Charge Threshold to Plateau - 1.7 - nC Gate to Drain “Miller” Charge - 3.7 - nC 383 ns Switching Characteristics (VGS = 10V) tON Turn-On Time - 255 td(ON) Turn-On Delay Time - 11.1 ns tr Rise Time - 244 ns td(OFF) Turn-Off Delay Time - 14.8 ns tf Fall Time - 35.3 tOFF Turn-Off Time - 50 75 ns V VDD = 15V, ID = 40A VGS = 10V, RGS = 16Ω ns Drain-Source Diode Characteristics ISD = 40A - 1.1 1.25 ISD = 3.2A - 0.85 1.2 V Reverse Recovery Time ISD = 40A, dISD/dt=100A/µs - 14.4 18.8 ns Reverse Recovered Charge ISD = 40A, dISD/dt=100A/µs - 5.1 6.7 nC VSD Source to Drain Diode Voltage trr QRR Notes: 1: Starting TJ = 25°C, VDD = 30V, VGS = 10V 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board 4: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 2 FDB8878 Rev. A www.fairchildsemi.com FDB8878 N-Channel PowerTrench® MOSFET Electrical Characteristics TA = 25°C unless otherwise noted 2.4 80 ID, DRAIN TCURRENT (A) 70 RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10V 4.5V 5.0V 60 4.0V 50 40 3.5V 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 3.0V 10 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3.0V 2.2 2.0 3.5V 1.8 4.0V 1.6 5.0V 1.2 1.0 10V 0.8 0.4 0 0.8 1.2 2.0 1.6 20 0 VDS, GATE TO SOURCE VOLTAGE (V) 80 0.06 ID =40A ID = 40A VGS =10V 1.5 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.7 1.3 1.1 0.9 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 0.05 0.04 0.03 TJ =175oC 0.03 TJ =25oC 0.01 0.7 - 80 - 40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 2 200 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Votlage 100 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 70 VGS = 0V 10 IS, REVERSE CURRENT (A) ID, DRAIN TCURRENT (A) 40 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 60 4.5V 1.4 VDS = 6V 50 40 TA = 175oC 30 20 TA = 25oC 10 TA = 0 TA = 175oC 1.0 TA = 25oC 0.1 0.01 TA = - 55oC -55oC 0.001 1.0 2.0 3.0 4.0 5.0 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.6 0.9 1.2 1.5 Figure 6. Body Diode Forward Voltage Variation With Source Current and Temperature 3 FDB8878 Rev. A 0.3 VSD, BODY DIODE FORWARD VOLTAGE www.fairchildsemi.com FDB8878 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted 10 10000 f = 1MHz VGS = 0V 8 CISS CAPACITANCE (pF) VGS, GATE- SOURCE VOLTAGE VDD =15V 6 4 WAVEFORMS IN ASCENDING ORDER: ID = 40A ID = 1A 2 1000 COSS CRSS 100 10 0 0 4 8 12 16 20 0.1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 1000 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ¼ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN TCURRENT (A) IAS, AVALANCHE CURRENT (A) 500 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 100 10µs 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.01 1 0.1 100 10 0.1 tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 10. Safe Operating Area 10000 80 P(PK), PEAK TRANSIENT POWER (W) 70 ID, DRAIN TCURRENT (A) 100µs 1ms DC 1 0.001 30 10 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 60 50 40 VGS = 10V 30 VGS = 4.5V 20 RθJC = 3.17oC/W 10 0 0 50 75 100 125 150 100 10 175 10-5 VDS, GATE TO SOURCE VOLTAGE (V) 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Maximum Continuous Drain Current vs Case Temperature 4 FDB8878 Rev. A SINGLE PULSE RθJC = 0.5oC/W TJ = 25oC 1000 www.fairchildsemi.com FDB8878 N-Channel PowerTrench® MOSFET Typical Characteristics TA = 25°C unless otherwise noted ZθJC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve 5 FDB8878 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17