Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT120N04
Power MOSFET
120A, 40V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
The UTC UTT120N04 is an N-channel enhancement mode
Power FET, it uses UTC’s advanced technology to provide
customers a minimum on-state resistance and high switching speed.
„
FEATURES
* RDS(ON)< 3.8mΩ @ VGS=10V, ID=60A
* High switching speed
* Improved dv/dt capability
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT120N04L-TA3-T
UTT120N04G-TA3-T
UTT120N04L-TQ2-T
UTT120N04G-TQ2-T
UTT120N04L-TQ2-R
UTT120N04G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
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QW-R502-793.b
UTT120N04
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
120
A
Continuous
ID
Drain Current
Pulsed
IDM
480
A
Avalanche Energy
Single Pulsed
EAS
541.5
mJ
Power Dissipation
PD
100
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATINGS
62.5
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=32V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=60A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDD=30V, VGS=10V, ID=1A,
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=0~10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=120A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
40
V
10
µA
+100 nA
-100 nA
1
3
3.8
2890
575
310
160
35
42
17
140
72
26
V
mΩ
pF
pF
pF
200
60
120
480
1.28
nC
nC
nC
ns
ns
ns
ns
A
A
V
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QW-R502-793.b
UTT120N04
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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