UNISONIC TECHNOLOGIES CO., LTD UT75N02 Preliminary Power MOSFET 75A, 25V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO- 251 The UTC UT75N02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES TO-220 * RDS(ON)< 7mΩ @ VGS=10V * RDS(ON)< 8mΩ @ VGS=7V SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT75N02L-TA3-T UT75N02G-TA3-T UT75N02L-TM3-T UT75N02G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-220 TO-251 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 4 QW-R502-328.c UT75N02 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 75 A Pulsed Drain Current (Note 2) IDM 170 A Avalanche Current IAR 60 A Avalanche Energy L=0.1mH EAS 140 mJ Repetitive Avalanche Energy (Note 3) L=0.05mH EAR 5.6 mJ TO-220 40 Power Dissipation PD W TO-251 28 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by maximum junction temperature. 3. Duty cycle≤1%. THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-251 TO-220 TO-251 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 3.13 4.53 UNIT °C/W °C/W 2 of 4 QW-R502-328.c UT75N02 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS=0V, ID=250µA VDS = 20V, VGS = 0V VDS =20V, VGS = 0V, TJ = 125°C VDS=0V, VGS=±20V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA On-State Drain Current (Note 1) ID(ON) VDS = 10V, VGS = 10V Static Drain-Source On-Resistance VGS = 10V, ID = 30A RDS(ON) (Note 1) VGS = 7V, ID = 24A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=15V, VGS=0 V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS = 15V, VGS = 10V, ID≈30A Turn-OFF Delay Time tD(OFF) RGS = 2.5Ω, RL = 1Ω, Turn-OFF Fall-Time tF Total Gate Charge QG VDS=0.5V(BR)DSS, VGS=10V, ID=35A Gate Source Charge QGS Gate Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Forward Voltage (Note 1) VSD IF = IS, VGS = 0V Continuous Current IS Notes: 1. Pulse test : Pulse Width≤300μsec, Duty Cycle≤2% 2. Independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 25 25 250 ±250 1 70 1.5 3 5 6 7 8 V µA µA nA V A mΩ mΩ 5000 1800 800 pF pF pF 7 7 24 6 140 40 75 ns ns ns ns nC nC nC 1.3 75 V A 3 of 4 QW-R502-328.c UT75N02 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-328.c