AOL1428A 30V N-Channel MOSFET General Description Product Summary The AOL1428A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS 30V 49A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 8mΩ RDS(ON) (at VGS = 4.5V) < 11.5mΩ 100% UIS Tested 100% Rg Tested UltraSO-8TM Bottom View Top View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: July 2009 IAS, IAR 30 A EAS, EAR 45 mJ 93 Steady-State Steady-State W 46 2.1 RθJA RθJC www.aosmd.com W 1.3 TJ, TSTG Symbol t ≤ 10s A 9.7 PDSM TA=70°C A 12.4 PD TC=100°C V 160 IDSM TA=70°C ±20 38 IDM TA=25°C Continuous Drain Current Avalanche Current C Units V 49 ID TC=100°C Maximum 30 -55 to 175 Typ 18.5 45 1.3 °C Max 25 60 1.6 Units °C/W °C/W °C/W Page 1 of 6 AOL1428A Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 On state drain current VGS=10V, VDS=5V 160 100 nA 2 2.6 V 6.2 8 9.7 12.5 VGS=4.5V, ID=12.4A 8.7 11.5 VDS=5V, ID=12.4A 60 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 VDS=0V, VGS= ±20V RDS(ON) Crss V TJ=55°C VGS=10V, ID=12.4A Output Capacitance Units 1 Zero Gate Voltage Drain Current Coss Max 30 IDSS IS Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12.4A A 0.7 mΩ mΩ S 1 V 49 A 860 1080 1300 pF 125 180 240 pF 65 110 160 pF 0.5 1 1.5 Ω 14 18 22 nC nC 6.4 8 9.6 2.7 3.4 4.1 nC 1.8 3 4.2 nC 6 VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω ns 3 ns 21 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12.4A, dI/dt=500A/ms 7 8.5 10 Qrr Body Diode Reverse Recovery Charge IF=12.4A, dI/dt=500A/ms 10 13 16 3 ns ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: July 2009 www.aosmd.com Page 2 of 6 AOL1428A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 10V 120 6V VDS=5V 100 120 7V 4.5V 80 4V 60 ID(A) ID (A) 90 3.5V 60 40 125°C 30 20 VGS=3V 25°C 0 0 0 1 2 3 4 0 5 2 12 Normalized On-Resistance RDS(ON) (mΩ) 6 8 2 10 VGS=4.5V 8 6 VGS=10V 4 VGS=10V ID=12.4A 1.8 1.6 17 1.4 VGS=4.5V5 ID=12.4A2 1.2 10 1 0.8 2 0 5 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 10 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 25 ID=12.4A 1.0E+01 20 1.0E+00 15 IS (A) RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 125°C 10 40 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: July 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOL1428A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 Ciss 1200 Capacitance (pF) VGS (Volts) 1400 VDS=15V ID=12.4A 8 6 4 1000 800 600 400 2 Coss 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited 10.0 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 500 10µs Power (W) 100.0 ID (Amps) 5 30 600 1000.0 10 1 TJ(Max)=175°C TC=25°C 400 17 5 2 10 300 200 100 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.6°C/W 0.1 0.01 0.00001 0.001 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance Crss 0 PD Ton Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: July 2009 www.aosmd.com Page 4 of 6 AOL1428A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 TA=25°C TA=100°C TA=150°C 10.0 80 Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 TA=125°C 60 40 20 1.0 0 1 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 25 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 150 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.1 10 1000 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: July 2009 www.aosmd.com Page 5 of 6 AOL1428A Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: July 2009 Vgs L Isd + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6