Datasheet

AOL1428A
30V N-Channel MOSFET
General Description
Product Summary
The AOL1428A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
high side switch in SMPS and general purpose
applications.
VDS
30V
49A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS = 4.5V)
< 11.5mΩ
100% UIS Tested
100% Rg Tested
UltraSO-8TM
Bottom View
Top View
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 0: July 2009
IAS, IAR
30
A
EAS, EAR
45
mJ
93
Steady-State
Steady-State
W
46
2.1
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
9.7
PDSM
TA=70°C
A
12.4
PD
TC=100°C
V
160
IDSM
TA=70°C
±20
38
IDM
TA=25°C
Continuous Drain
Current
Avalanche Current
C
Units
V
49
ID
TC=100°C
Maximum
30
-55 to 175
Typ
18.5
45
1.3
°C
Max
25
60
1.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOL1428A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VGS(th)
ID(ON)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
On state drain current
VGS=10V, VDS=5V
160
100
nA
2
2.6
V
6.2
8
9.7
12.5
VGS=4.5V, ID=12.4A
8.7
11.5
VDS=5V, ID=12.4A
60
TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
µA
5
VDS=0V, VGS= ±20V
RDS(ON)
Crss
V
TJ=55°C
VGS=10V, ID=12.4A
Output Capacitance
Units
1
Zero Gate Voltage Drain Current
Coss
Max
30
IDSS
IS
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=12.4A
A
0.7
mΩ
mΩ
S
1
V
49
A
860
1080
1300
pF
125
180
240
pF
65
110
160
pF
0.5
1
1.5
Ω
14
18
22
nC
nC
6.4
8
9.6
2.7
3.4
4.1
nC
1.8
3
4.2
nC
6
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
ns
3
ns
21
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12.4A, dI/dt=500A/ms
7
8.5
10
Qrr
Body Diode Reverse Recovery Charge IF=12.4A, dI/dt=500A/ms
10
13
16
3
ns
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2009
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Page 2 of 6
AOL1428A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
10V
120
6V
VDS=5V
100
120
7V
4.5V
80
4V
60
ID(A)
ID (A)
90
3.5V
60
40
125°C
30
20
VGS=3V
25°C
0
0
0
1
2
3
4
0
5
2
12
Normalized On-Resistance
RDS(ON) (mΩ)
6
8
2
10
VGS=4.5V
8
6
VGS=10V
4
VGS=10V
ID=12.4A
1.8
1.6
17
1.4
VGS=4.5V5
ID=12.4A2
1.2
10
1
0.8
2
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
25
ID=12.4A
1.0E+01
20
1.0E+00
15
IS (A)
RDS(ON) (mΩ)
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
10
40
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
5
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2009
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOL1428A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
Ciss
1200
Capacitance (pF)
VGS (Volts)
1400
VDS=15V
ID=12.4A
8
6
4
1000
800
600
400
2
Coss
200
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10µs
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
RDS(ON)
limited
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
500
10µs
Power (W)
100.0
ID (Amps)
5
30
600
1000.0
10
1
TJ(Max)=175°C
TC=25°C
400
17
5
2
10
300
200
100
1
VDS (Volts)
10
100
0
0.0001
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0.01
0.1
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.6°C/W
0.1
0.01
0.00001
0.001
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
Crss
0
PD
Ton
Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2009
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Page 4 of 6
AOL1428A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
TA=150°C
10.0
80
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100.0
TA=125°C
60
40
20
1.0
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
60
TA=25°C
50
1000
40
Power (W)
Current rating ID(A)
25
30
20
17
5
2
10
100
10
10
1
0.00001
0
0
25
50
75
100
125
150
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.1
10
1000
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
175
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2009
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Page 5 of 6
AOL1428A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: July 2009
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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Page 6 of 6