AOL1404 20V N-Channel MOSFET General Description Product Summary The AOL1404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS RDS(ON) (at VGS=4.5V) 20V 45A < 4mΩ RDS(ON) (at VGS = 2.5V) < 5.6mΩ ID (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Top View D UltraSO-8TM Bottom View D G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: Jan 2010 IAS, IAR 57 A EAS, EAR 162 mJ 60 Steady-State Steady-State W 30 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 14 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case 18 PD TC=100°C A 160 IDSM TA=70°C V 35 IDM TA=25°C Continuous Drain Current Units V 45 ID TC=100°C Pulsed Drain Current Maximum 20 ±12 -55 to 175 Typ 20 50 1.8 www.aosmd.com °C Max 25 60 2.5 Units °C/W °C/W °C/W Page 1 of 6 AOL1404 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=20V, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 0.5 VGS=10V, VDS=5V 160 VGS=4.5V, ID=20A TJ=125°C VGS=2.5V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=20A Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 20 VGS(th) ID(ON) RDS(ON) Typ µA 100 nA 1 1.6 V 3.3 4 4.6 5.6 4.5 5.6 mΩ 1 V 45 A A 50 0.7 mΩ S 3080 3860 4630 pF 520 740 960 pF 350 580 810 pF 0.6 1.4 2.1 Ω 28 36 43 nC 7 9 11 nC 7 12 17 nC 7 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω ns 8 ns 70 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 17 20 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 29 36 43 18 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jan 2010 www.aosmd.com Page 2 of 6 AOL1404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 4.5V VDS=5V 2.5V 2V 60 60 ID(A) ID (A) 80 40 40 125°C 20 VGS=1.5V 0 0 0 1 2 3 4 5 0.5 8 1.5 2 2.5 Normalized On-Resistance 1.8 6 RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 4 VGS=4.5V 2 VGS=4.5V ID=20A 1.6 1.4 17 5 VGS=2.5V ID=20A 2 1.2 10 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 10 ID=20A 9 1.0E+01 8 40 1.0E+00 7 IS (A) RDS(ON) (mΩ) 25°C 20 6 5 125°C 4 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 3 1.0E-04 2 25°C 1 0 2 4 6 1.0E-05 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jan 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOL1404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 7000 VDS=10V ID=20A 6000 Capacitance (pF) VGS (Volts) 4 3 2 1 3000 Coss 2000 Crss 0 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 0 40 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 200 1000.0 10µs 10µs RDS(ON) limited 160 10.0 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 1 17 5 2 10 120 80 40 1 VDS (Volts) 10 100 0 0.0001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.01 1 0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=2.5°C/W PD 0.1 Ton Single Pulse 0.01 0.00001 0.1 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 100µs Power (W) 100.0 ID (Amps) 4000 1000 0 ZθJC Normalized Transient Thermal Resistance Ciss 5000 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jan 2010 www.aosmd.com Page 4 of 6 AOL1404 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 60 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 50 40 30 20 10 TA=125°C 0 10 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 60 100 50 80 40 30 20 50 75 100 125 150 175 TA=25°C 17 5 2 10 60 40 20 10 0 0.0001 0 0 25 50 75 100 125 150 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.01 1 100 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 25 TCASE (°C) Figure 13: Power De-rating (Note F) Power (W) Current rating ID(A) 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Jan 2010 www.aosmd.com Page 5 of 6 AOL1404 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Jan 2010 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 6 of 6