AON7528 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application RDS(ON) (at VGS=10V) < 2mΩ RDS(ON) (at VGS = 4.5V) < 3.4mΩ Typical ESD protection HBM Class 2 100% UIS Tested 100% Rg Tested • DC/DC Converters Top View 30V 50A ID (at VGS=10V) DFN 3.3x3.3 EP Bottom View D Top View S 1 8 S S 2 7 3 6 D D D G 4 5 D G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current Continuous Drain Current C V A 200 45 IDSM TA=70°C ±20 39 IDM TA=25°C Units V 50 ID TC=100°C Maximum 30 A 36 Avalanche Current C IAS 50 A Avalanche energy L=0.05mH C EAS 63 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: May 2012 6.2 Steady-State Steady-State RθJA RθJC www.aosmd.com W 4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 16 45 1.1 °C Max 20 55 1.5 Units °C/W °C/W °C/W Page 1 of 6 AON7528 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd 1.8 ±10 µA 2.2 V 1.6 2 2.3 2.9 2.6 3.4 mΩ 1 V 50 A 81 0.7 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.5 mΩ S 2895 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 5 1.2 Units V 1 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ pF 1439 pF 149 pF 1.0 1.5 Ω 45.4 60 nC 21.3 29 nC 8.0 nC Gate Drain Charge 9.0 nC tD(on) Turn-On DelayTime 8.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 5.0 ns 31.0 ns 7.5 ns 22.3 ns nC 54 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: May 2012 www.aosmd.com Page 2 of 6 AON7528 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 70 3.5V 70 60 60 3V 4.5V 50 50 10V ID(A) ID (A) VDS=5V 40 40 30 30 20 125°C 20 VGS=2.5V 25°C 10 10 0 0 0 1 2 3 4 1 5 4 4 5 Normalized On-Resistance 1.6 3 VGS=4.5V 2 1 VGS=10V 0 VGS=10V ID=20A 1.4 17 5 VGS=4.5V 2 ID=20A 10 1.2 1 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 40 1.0E+00 3 125°C IS (A) RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ) 2 2 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 25°C 1 1.0E-04 0 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: May 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7528 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 3500 Capacitance (pF) 8 VGS (Volts) 4000 VDS=15V ID=20A 6 4 Ciss 3000 2500 2000 1500 Coss 1000 2 500 0 Crss 0 0 10 20 30 40 50 0 10µs RDS(ON) limited 30 10.0 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 0.0 0.01 TJ(Max)=150°C TC=25°C 400 10µs 100µs 0.1 1 Power (W) ID (Amps) 20 500 1000.0 100.0 10 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 17 5 2 10 300 200 100 10 100 0 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: May 2012 www.aosmd.com Page 4 of 6 AON7528 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 50 80 Current rating ID(A) Power Dissipation (W) 90 70 60 50 40 30 40 30 20 20 10 10 0 0 25 50 75 100 125 0 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 Ton 0.1 T 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: May 2012 www.aosmd.com Page 5 of 6 AON7528 XXX Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: May 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6