Datasheet

AON7528
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Application
RDS(ON) (at VGS=10V)
< 2mΩ
RDS(ON) (at VGS = 4.5V)
< 3.4mΩ
Typical ESD protection
HBM Class 2
100% UIS Tested
100% Rg Tested
• DC/DC Converters
Top View
30V
50A
ID (at VGS=10V)
DFN 3.3x3.3 EP
Bottom View
D
Top View
S
1
8
S
S
2
7
3
6
D
D
D
G
4
5
D
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
CurrentG
Pulsed Drain Current
Continuous Drain
Current
C
V
A
200
45
IDSM
TA=70°C
±20
39
IDM
TA=25°C
Units
V
50
ID
TC=100°C
Maximum
30
A
36
Avalanche Current C
IAS
50
A
Avalanche energy L=0.05mH C
EAS
63
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0: May 2012
6.2
Steady-State
Steady-State
RθJA
RθJC
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W
4
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
-55 to 150
Typ
16
45
1.1
°C
Max
20
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON7528
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS,ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
1.8
±10
µA
2.2
V
1.6
2
2.3
2.9
2.6
3.4
mΩ
1
V
50
A
81
0.7
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.5
mΩ
S
2895
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
5
1.2
Units
V
1
TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
pF
1439
pF
149
pF
1.0
1.5
Ω
45.4
60
nC
21.3
29
nC
8.0
nC
Gate Drain Charge
9.0
nC
tD(on)
Turn-On DelayTime
8.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
5.0
ns
31.0
ns
7.5
ns
22.3
ns
nC
54
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2012
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Page 2 of 6
AON7528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
70
3.5V
70
60
60
3V
4.5V
50
50
10V
ID(A)
ID (A)
VDS=5V
40
40
30
30
20
125°C
20
VGS=2.5V
25°C
10
10
0
0
0
1
2
3
4
1
5
4
4
5
Normalized On-Resistance
1.6
3
VGS=4.5V
2
1
VGS=10V
0
VGS=10V
ID=20A
1.4
17
5
VGS=4.5V
2
ID=20A
10
1.2
1
0.8
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
5
1.0E+02
ID=20A
1.0E+01
4
40
1.0E+00
3
125°C
IS (A)
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
RDS(ON) (mΩ)
2
2
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
1
1.0E-04
0
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: May 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON7528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
4500
3500
Capacitance (pF)
8
VGS (Volts)
4000
VDS=15V
ID=20A
6
4
Ciss
3000
2500
2000
1500
Coss
1000
2
500
0
Crss
0
0
10
20
30
40
50
0
10µs
RDS(ON)
limited
30
10.0
1ms
DC
10ms
1.0
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
TJ(Max)=150°C
TC=25°C
400
10µs
100µs
0.1
1
Power (W)
ID (Amps)
20
500
1000.0
100.0
10
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
17
5
2
10
300
200
100
10
100
0
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
(Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
0.1
PD
0.01
Ton
T
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev0: May 2012
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Page 4 of 6
AON7528
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
60
50
80
Current rating ID(A)
Power Dissipation (W)
90
70
60
50
40
30
40
30
20
20
10
10
0
0
25
50
75
100
125
0
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
0.001
0.0001
0.001
0.01
Ton
0.1
T
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev0: May 2012
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Page 5 of 6
AON7528
XXX
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev0: May 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6