Datasheet

AON2400
8V N-Channel MOSFET
General Description
Product Summary
The AON2400 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=2.5V)
VDS
8V
8A
RDS(ON) (at VGS = 2.5V)
< 11mΩ
RDS(ON) (at VGS = 1.8V)
< 13mΩ
RDS(ON) (at VGS = 1.5V)
< 16mΩ
RDS(ON) (at VGS = 1.2V)
< 23mΩ
DFN 2x2B
Top View
S
D
Bottom View
D
D
D
Pin 1
S
D
G
Pin 1
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0 : April. 2012
Steady-State
A
2.8
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
32
PD
TA=70°C
±5
6
IDM
TA=25°C
Power Dissipation A
Units
V
8
ID
TA=100°C
Maximum
8
RθJA
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-55 to 150
Typ
37
66
°C
Max
45
80
Units
°C/W
°C/W
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AON2400
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
8
V
VDS=8V, VGS=0V
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±5V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.25
ID(ON)
On state drain current
VGS=2.5V, VDS=5V
32
Units
±100
nA
0.46
0.75
V
8.5
11
11
14
VGS=1.8V, ID=6A
10
13
VGS=1.5V, ID=5A
11.5
16
mΩ
VGS=1.2V, ID=3A
16
23
mΩ
Forward Transconductance
VDS=5V, ID=8A
100
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.53
IS
Maximum Body-Diode Continuous Current
VGS=2.5V, ID=8A
TJ=125°C
RDS(ON)
gFS
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=4V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=4.5V, VDS=4V, ID=8A
A
mΩ
mΩ
S
1
V
4.5
A
1645
pF
470
pF
320
pF
1.6
3.2
16
25
Ω
nC
2
nC
Qgd
Gate Drain Charge
2.8
nC
tD(on)
Turn-On DelayTime
7
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
37
ns
tf
Turn-Off Fall Time
13
ns
ns
nC
VGS=4.5V, VDS=4V, RL=0.5Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
17
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
9
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : April. 2012
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Page 2 of 5
AON2400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
15
4.5V
2.5V
1.8V
20
VDS=5V
1.2V
10
ID(A)
ID (A)
15
125°C
10
5
VGS=1V
25°C
5
0
0
0
1
2
3
4
0
5
0.6
0.9
1.2
1.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
25
Normalized On-Resistance
1.6
20
VGS=1.2V
RDS(ON) (mΩ)
0.3
15
VGS=1.5V
10
VGS=2.5V
5
VGS=1.8V
VGS=2.5V
ID=8A
1.4
VGS=1.8V
ID=6A
1.2
VGS=1.5V
ID=3A
1
VGS=1.2V
ID=3A
0.8
0
0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E+02
25
ID=8A
1.0E+01
RDS(ON) (mΩ)
IS (A)
20
1.0E+00
15
125°C
1.0E-01
125°C
10
25°C
1.0E-02
1.0E-03
5
25°C
1.0E-04
0
1
2
3
4
5
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : April. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
2500
VDS=4V
ID=8A
2000
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1500
1000
Coss
1
500
0
0
Crss
0
4
8
12
16
20
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
8
10000
10µs
RDS(ON)
limited
TA=25°C
10µs
100µs
1000
Power (W)
ID (Amps)
4
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
2
1ms
1.0
10ms
0.1
DC
TJ(Max)=150°C
TA=25°C
0.0
0.01
100
10
0.1
1
10
100
VDS (Volts)
1
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : April. 2012
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Page 4 of 5
AON2400
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
DUT
V ds -
Isd
V gs
Ig
Rev 0 : April. 2012
Idt
V gs
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5