Datasheet

AON2290
100V N-Channel MOSFET
General Description
Product Summary
The AON2290 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
100V
4.5A
RDS(ON) (at VGS =10V)
< 72mΩ
RDS(ON) (at VGS =4.5V)
< 97mΩ
VDS
D
DFN 2x2B
Top View
S
Bottom View
D
D
D
Pin 1
S
G
D
G
Pin 1
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2.0: April 2013
Steady-State
Steady-State
A
2.8
W
1.8
TJ, TSTG
Symbol
t ≤ 10s
V
25
PD
TA=70°C
±20
3.5
IDM
TA=25°C
A
Units
V
4.5
ID
TA=100°C
C
Maximum
100
RθJA
RθJC
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-55 to 150
Typ
37
66
6.5
°C
Max
45
80
8.0
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON2290
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
25
±100
nA
2.3
2.8
V
59
72
110
134
VGS=4.5V, ID=4A
77
97
mΩ
13
1
V
3.5
A
VGS=10V, ID=4.5A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
A
0.78
mΩ
S
415
pF
VGS=0V, VDS=50V, f=1MHz
32
pF
3
pF
VGS=0V, VDS=0V, f=1MHz
1.4
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qg
Units
µA
5
VGS(th)
Coss
Max
V
VDS=100V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=10V, VDS=50V, ID=4.5A
6.5
12
3
6
nC
nC
1.5
nC
1.5
nC
4
ns
2
ns
15
ns
2
ns
16
ns
nC
VGS=10V, VDS=50V, RL=11Ω,
RGEN=3Ω
IF=4.5A, dI/dt=500A/µs
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs
44
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These
curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: April 2013
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Page 2 of 6
AON2290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
10V
VDS=5V
6V
20
4.5V
15
ID(A)
ID (A)
15
125°C
10
10
3.5V
5
25°C
5
VGS=3.0V
0
0
0
1
2
3
4
1
5
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
100
Normalized On-Resistance
2.2
90
VGS=4.5V
RDS(ON) (mΩ
Ω)
2
80
70
60
VGS=10V
50
2
VGS=10V
ID=4.5A
1.8
1.6
1.4
1.2
VGS=4.5V
ID=4A
1
0.8
40
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
160
ID=4.5A
140
1.0E+01
RDS(ON) (mΩ
Ω)
120
IS (A)
125°C
1.0E+00
100
1.0E-01
80
1.0E-02
60
125°C
25°C
1.0E-03
25°C
40
1.0E-04
20
1.0E-05
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.2.0: April 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON2290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
VDS=50V
ID=4.5A
8
400
Capacitance (pF)
VGS (Volts)
Ciss
6
4
300
200
2
Coss
100
Crss
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
20
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10000
100.0
TA=25°C
10µs 10µs
RDS(ON)
limited
1000
Power (W)
ID (Amps)
10.0
100µs
1.0
1ms
100
10ms
0.1
TJ(Max)=150°C
TC=25°C
10
DC
0.0
0.01
0.1
1
10
VDS (Volts)
100
1
1000
1E-05
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note H)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: April 2013
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Page 4 of 6
AON2290
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=8.0°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance (Note G
Rev.2.0: April 2013
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Page 5 of 6
AON2290
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
Idt
DUT
V gs
V ds Isd
V gs
Ig
Rev.2.0: April 2013
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 6 of 6