UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment. 0.15 Each lead has same dimensions Abbreviated symbol : K1 zApplications Interfacing, switching (30V, 100mA) zPackaging specifications zInner circuit Package Type (6) (5) TN Basic ordering unit (pieces) (4) ∗ Taping Code Gate Protection Diode Tr1 3000 UM6K1N Tr2 ∗ (1) (1) (2) (3) (4) (5) (6) zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and Tr2.> Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Drain current Total power dissipation Channel temperature Range of storage temperature Limits 30 ±20 ±100 ±400 150 150 −55 to +150 Tr1 Tr1 Tr2 Tr2 Tr2 Tr1 Gate Protection Diode Source Gate Drain Source Gate Drain (2) (3) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. Unit V V mA mA mW °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 833 1042 °C / W / TOTAL °C / W / ELEMENT ∗ With each pin mounted on the recommended lands. Rev.B 1/3 UM6K1N Transistors zElectrical characteristics (Ta=25°C) <It is the same characteristics for Tr1 and Tr2.> Symbol Min. Typ. Max. Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Parameter − 30 − 0.8 − − 20 − − − − − − − − − − − 5 7 − 13 9 4 15 35 80 80 ±1 − 1.0 1.5 8 13 − − − − − − − − Static drain-source on-state resistance RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Yfs Ciss Coss Crss td (on) tr td (off) tf Conditions Unit µA V µA V Ω Ω mS pF pF pF ns ns ns ns VGS=±20V, VDS=0V ID= 10µA, VGS=0V VDS= 30V, VGS=0V VDS= 3V, ID= 100µA ID= 10mA, VGS= 4V ID= 1mA, VGS= 2.5V ID= 10mA, VDS= 3V VDS= 5V VGS=0V f=1MHz VDD 5V ID= 10mA VGS= 5V RL=500Ω RG=10Ω 0.15 200m 50m 3.5V 0.1 2.5V 0.05 2V 2 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 3 4 0.1m 0 5 DRAIN-SOURCE VOLTAGE : VDS (V) 10 50 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 4 1 0.5 0 −50 −25 0.5 DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) 20 5 2 1 0.005 0.01 0.02 0.05 0.1 0.2 DRAIN CURRENT : ID (A) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( ) 25 50 75 100 125 150 Fig.3 Gate Threshold Voltage vs. Channel Temperature 10 0.5 0.001 0.002 0 CHANNEL TEMPERATURE : Tch (°C) VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C VDS=3V ID=0.1mA 1.5 Fig.2 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 3 2 2 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical Output Characteristics 50 1 0.5 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 20m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m 3V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V GATE THRESHOLD VOLTAGE : VGS(th) (V) zElectrical characteristic curves Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Rev.B 2/3 UM6K1N Transistors 0.5 VDS=3V Pulsed 0.2 ID=100mA 6 ID=50mA 5 4 3 2 0.1 0.05 Ta=−25°C 25°C 75°C 125°C 0.02 0.01 0.005 1 0.002 0 −50 −25 0.001 0.0001 0.0002 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) 0.05 0.1 0.2 20m 0V 5m 2m 1m 0.5m 0.1m 0.5 1 5m 2m 1m 0.5m 0.2m 0 1000 Coss Crss td(off) 200 100 50 20 tr td(on) 10 5 0.5 0.1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 0.2 0.5 1 2 5 10 20 2 0.1 0.2 50 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( ) 1.5 Ta=25°C VDD=5V VGS=5V RG=10Ω tf 500 Ciss 2 1 Fig.9 Reverse Drain Current vs. Source-Drain Voltage ( ) 10 5 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 0.2m 0 Ta=125°C 75°C 25°C −25°C 10m 0.5 Ta=25°C f=1MHZ VGS=0V Pulsed 20 CAPACITANCE : C (pF) REVERCE DRAIN CURRENT : IDR (A) 0.005 0.01 0.02 50 50m VGS=4V 50m 20m Fig.8 Forward Transfer Admittance vs. Drain Current Ta=25°C Pulsed 100m VGS=0V Pulsed 100m DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 200m 200m 0.1m 0.0005 0.001 0.002 SWITHING TIME : t (ns) 7 10m REVERCE DRAIN CURRENT : IDR (A) VGS=4V Pulsed FORWARD TRANSFER ADMITTANCE : Yfs (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 8 Fig.11 Typical Capacitance vs. Drain-Source Voltage Fig.12 Switching Characteristics zSwitching characteristics measurement circuit Pulse Width VGS RG VGS ID D.U.T. VDS RL 10% 90% 90% tr td(on) ton Switching Time Test Circuit 50% 10% VDS VDD Fig.13 90% 50% 10% Fig.14 td(off) tf toff Switching Time Waveforms Rev.B 3/3 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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