JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N SOT-363 Dual N-channel MOSFET FEATURES 1) Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment. MARKING: K1 1 K1 Chip Size : 0.41mm*0.41mm Equivalent circuit (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain כA protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) It is the same ratings for Tr1 and Tr2 Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.15 W RθJA Thermal Resistance from Junction to Ambient 833 ℃ /W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ B,Oct,2011 MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) It is the same ratings for Tr1 and Tr2 Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 µA Gate –Source leakage current IGSS VGS =±20V, VDS = 0V ±1 µA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 1.5 V Drain-Source On-Resistance RDS(on) VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 30 V 0.8 20 mS Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf *These parameters have no way to verify. B,Oct,2011 UM6K1N Typical Characteristics Output Characteristics Transfer Characteristics 0.20 200 4.0V Ta=25℃ 100 0.15 (mA) 30 ID VGS=2.5V 0.10 DRAIN CURRENT DRAIN CURRENT ID (A) VGS=3.0V 3.5V Pulsed 0.05 10 3 1 VGS=2.0V VDS=3V 0.3 Ta=25℃ VGS=1.5V Pulsed 0.00 0.1 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 5 0 (V) 1 4 (V) 15 Ta=25℃ Ta=25℃ Pulsed Pulsed ( ) ( ) 10 RDS(ON) 40 ON-RESISTANCE RDS(ON) 3 VGS RDS(ON) —— VGS RDS(ON) —— ID 60 ON-RESISTANCE 2 GATE TO SOURCE VOLTAGE 20 VGS=2.5V ID=100mA 5 ID=50mA VGS=4V 0 0 3 1 10 DRAIN CURRENT IS 100 30 —— ID 200 (mA) 0 5 10 GATE TO SOURCE VOLTAGE 15 VGS 20 (V) VSD 200 VGS=0V 100 Ta=25℃ Pulsed SOURCE CURRENT IS (mA) 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 1.0 VSD (V) B,Oct,2011