Datasheet

UNISONIC TECHNOLOGIES CO., LTD
14N40K-MT
Preliminary
Power MOSFET
14A, 400V N-CHANNEL
POWER MOSFET

1
DESCRIPTION
The UTC 14N40K-MT is an N-Channel enhancement mode
power MOSFET. The device adopts planar stripe and uses
DMOS technology to minimize and provide lower on-state
resistance and faster switching speed. It can also withstand high
energy pulse under the avalanche and commutation mode
conditions.
The UTC 14N40K-MT is ideally suitable for high efficiency
switch mode power supply, power factor correction and electronic
lamp ballast based on half bridge topology.

1
TO-220F
TO-220
1
1
TO-220F1
TO-220F2
FEATURES
* RDS(ON) < 0.34Ω @ VGS = 10V, ID = 7A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N40KL-TA3-T
14N40KG-TA3-T
14N40KL-TF3-T
14N40KG-TF3-T
14N40KL-TF1-T
14N40KG-TF1-T
14N40KL-TF2-T
14N40KG-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
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14N40K-MT
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Preliminary
Power MOSFET
MARKING
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
14
A
Pulsed Drain Current (Note 2)
IDM
48
A
Avalanche Current (Note 2)
IAR
14
A
Single Pulsed Avalanche Energy (Note 3)
EAS
535
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
150
W
Power Dissipation (TC=25°C) TO-220F/TO-220F1
40
W
TO-220F2
PD
TO-220
1.2
W/°C
Derate above 25°C
TO-220F/TO-220F1
0.32
W/°C
TO-220F2
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 5.46mH, IAS = 14A, VDD = 50V, RG= 25Ω, Starting TJ = 25°C
4. ISD≤14A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-220F2
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SYMBOL
θJA
θJC
RATINGS
62.5
0.83
UNIT
°С/W
°С/W
3.125
°С/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 1mA
400
V
VDS = 400V, VGS = 0V
10
μA
VGS = 20V, VDS = 0V
100 nA
Gate-Source Leakage Current
IGSS
-100 nA
VGS = -20V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C
0.5
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 7A
0.26 0.34 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
810
pF
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
190
pF
10.5
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
34.9
nC
VDS= 50V, VGS= 10V, ID= 0.3A,
Gate-Source Charge
QGS
9.1
nC
ID=100µA (Note 1, 2)
8.8
nC
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
66
nS
VDS= 30V, VGS= 10V, ID =
Turn-On Rise Time
tR
96
nS
0.3A,
Turn-Off Delay Time
tD(OFF)
200
nS
RG = 25Ω (Note 1, 2)
112
nS
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 14A
1.4
V
Maximum Continuous Drain-Source Diode
IS
14
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
56
A
Forward Current
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating ambient temperature.
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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