UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high RuggednessA SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-971.B 4N60-N Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 4N60L-TA3-T 4N60G-TA3-T TO-220 4N60L-TF1-T 4N60G-TF1-T TO-220F1 4N60L-TF2-T 4N60G-TF2-T TO-220F2 4N60L-TF3T-T 4N60G-TF3T-T TO-220F3 4N60L-TF3-T 4N60G-TF3-T TO-220F 4N60L-TM3-T 4N60G-TM3-T TO-251 4N60L-TMS-T 4N60G-TMS-T TO-251S 4N60L-TMS2-T 4N60G-TMS2-T TO-251S2 4N60L-TMS4-T 4N60G-TMS4-T TO-251S4 4N60L-TN3-R 4N60G-TN3-R TO-252 4N60L-TND-R 4N60G-TND-R TO-252D 4N60L-T2Q-T 4N60G-T2Q-T TO-262 4N60L-TQ2-R 4N60G-TQ2-R TO-263 4N60L-TQ2-T 4N60G-TQ2-T TO-263 4N60G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G G G G G G G G G G G G S 2 D D D D D D D D D D D D D D S Pin Assignment 3 4 5 6 S S S S S S S S S S S S S S S G D D 7 D 8 D Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Tape Reel Tube Tape Reel (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2 4N60L-TA3-T (1)Packing Type (2)Package Type (3)Green Package TF3: TO-220F, TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S, TMS2: TO-251S2, TN3: TO-252, TMS4: TO-251S4, TND: TO-252D, T2Q: TO-262, TQ2: TO-263, K08-5060: DFN-8(5×6) (3) L: Lead Free, G: Halogen Free and Lead Free MARKING PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S MARKING TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-263 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-971.B 4N60-N Power MOSFET PIN CONFIGURATION DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-971.B 4N60-N Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A 4.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 16 A 260 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 TO-220F/TO-220F1 106 TO-220F2/TO-220F3 PD Power Dissipation TO-251/TO-251S W TO-251S2/TO-251S4 50 TO-252/TO-252D DFN-8(5×6) 30 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D DFN-8(5×6) TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D DFN-8(5×6) SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 UNIT 62.5 θJA 62.5 °С/W 110 75 1.18 3.47 θJc 3.28 °С/W 2.5 4.17 4 of 8 QW-R502-971.B 4N60-N Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 4.0A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 4.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 0.6 V 10 μA 100 nA -100 nA V/°С 2.1 4.0 2.5 V Ω 530 70 25 630 90 40 pF pF pF 35 70 190 100 80 5 9 55 110 240 130 ns ns ns ns nC nC nC 1.4 V 4.4 A 17.6 A 2.0 250 1.5 ns μC 5 of 8 QW-R502-971.B 4N60-N Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-971.B 4N60-N Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 7 of 8 QW-R502-971.B 4N60-N Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-971.B