UNISONIC TECHNOLOGIES CO., LTD 6N65Z-Q Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. FEATURES * RDS(ON) = 1.85Ω @VGS = 10V, ID=3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N65ZL-TF3-T 6N65ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-978, A 6N65Z-Q Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A 100 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns Power Dissipation PD 40 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L = 14mH, IAS = 3.7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATING 62.5 3.2 UNIT °C/W °C/W 2 of 6 QW-R502-978. A 6N65Z-Q Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 5 Forward VGS = 20V, VDS = 0V Gate- Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0V 5 Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.7 1.85 DYNAMIC CHARACTERISTICS Input Capacitance CISS 750 900 VDS=25V, VGS=0V, f=1.0 MHz Output Capacitance COSS 65 80 Reverse Transfer Capacitance CRSS 10.5 13 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 70 Turn-On Rise Time tR 55 75 VDD=30V, ID =0.5A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 150 170 Turn-Off Fall Time tF 70 90 75 95 Total Gate Charge QG VDS=520V, ID=6.2A, VGS=10V Gate-Source Charge QGS 18 (Note 1, 2) Gate-Drain Charge QGD 19 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 Maximum Continuous Drain-Source Diode IS 6.2 Forward Current Maximum Pulsed Drain-Source Diode ISM 24.8 Forward Current 290 Reverse Recovery Time trr VGS = 0 V, IS = 6.2 A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR 2.35 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT V μA μA μA V/°C V Ω pF pF pF ns ns ns ns nC nC nC V A A ns μC 3 of 6 QW-R502-978. A 6N65Z-Q Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-978. A 6N65Z-Q Power MOSFET TEST CIRCUITS AND WAVEFORMS Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-978. A 6N65Z-Q Power MOSFET Drain Current,ID (µA) Drain Current,ID (µA) Drain Current,ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-978. A