UTC-IC UF840

UNISONIC TECHNOLOGIES CO., LTD
UF840
MOSFET
8A, 500V, 0.85Ω, N-CHANNEL
POWER MOSFET
1
DESCRIPTION
TO-220
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
1
FEATURES
TO-220F
* 8A, 500V, Low RDS(ON)(0.85Ω)
* Single Pulse Avalanche Energy Rated
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
*Pb-free plating product number: UF840L
SYMBOL
D
G
S
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
UF840-TA3-T
UF840L-TA3-T
TO-220
UF840-TF3-T
UF840L-TF3-T
TO-220F
Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
UF840L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
1 of 8
QW-R502-047,C
UF840
MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless Otherwise Specified.)
PARAMETER
Drain to Source Voltage (TJ =25℃~125℃)
Drain to Gate Voltage (RGS = 20kΩ, TJ =25℃~125℃)
Gate to Source Voltage
Continuous
Tc = 100℃
Drain Current
SYMBOL
VDSS
VDGR
VGS
ID
RATINGS
500
500
±20
8.0
5.1
UNIT
V
V
V
A
A
Pulsed
IDM
32
A
Total Power Dissipation (Ta = 25℃)
125
W
PD
Derating above 25℃
1.0
W/℃
Single Pulse Avalanche Energy Rating
EAS
510
mJ
(VDD=50V, starting TJ =25℃, L=14mH, RG=25Ω, peak IAS = 8A)
Operating Temperature Range
TOPR
-55 ~ +150
℃
Storage Temperature Range
TSTG
-55 ~ +150
℃
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
SYMBOL
θJA
θJc
RATINGS
62.5
1.0
UNIT
℃/W
ELECTRICAL SPECIFICATIONS (Ta =25℃, unless Otherwise Specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V (Figure 16)
Gate to Threshold Voltage
VGS(THR) VGS = VDS, ID = 250µA
On-State Drain Current (Note 1)
ID(ON)
VDS > ID(ON) x RDS(ON)MAX, VGS = 10V
VDS = Rated BVDSS, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
VDS=0.8xRated BVDSS,VGS=0V,TJ= 125℃
Gate to Source Leakage Current
IGSS
VGS = ±20V
Drain to Source On Resistance
RDS(ON) ID = 4.4A, VGS = 10V (Figure 14, 15)
(Note 1)
Forward Transconductance (Note 1)
gFS
VDS ≥ 50V, ID = 4.4A (Figure 18)
Turn-On Delay Time
tDLY(ON)
VDD=250V, ID ≈ 8A, RG = 9.1Ω, RL =30Ω
Rise Time
tR
Turn-Off Delay Time
tDLY(OFF) (Note 2)
Fall Time
tF
Total Gate Charge
QG(TOT) VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS
IG(REF) =1.5mA (Figure 20)
Gate to Source Charge
QGS
(Note 3)
Gate to Drain “Miller” Charge
QGD
Input Capacitance
CISS
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance
COSS
(Figure 17)
Reverse - Transfer Capacitance
CRSS
NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
500
2
8
TYP MAX UNIT
V
4
V
A
25
µA
250
µA
±100 nA
0.8
4.9
7.4
15
21
50
20
42
7
22
1225
200
85
0.85
21
35
74
30
63
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
2 of 8
QW-R502-047,C
UF840
MOSFET
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL MIN
Internal Drain Inductance
Measured from the contact screw on tab to center of die
LD
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
LS
Measured from the source lead(6mm from header) to source bond pad
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
TYP
MAX
UNIT
3.5
4.5
nH
nH
7.5
nH
D
LD
G
LS
S
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
TJ = 25℃, ISD = 8.0A, VGS = 0V(Figure 19)
VSD
(Note 1)
Continuous Source to Drain Current
ISD
Note 2
Pulse Source to Drain Current
ISDM
TJ = 25℃, ISD = 8.0A, dISD/dt = 100A/µs
Reverse Recovery Time
tRR
210
T
=
25
℃
,
I
=
8.0A,
dI
/dt
=
100A/µs
Reverse Recovery Charge
QRR
2
J
SD
SD
NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP MAX UNIT
475
4.6
2
V
8
32
970
8.2
A
A
ns
µC
D
G
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-047,C
UF840
MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
VARY tp TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
VGS
DUT
tp
0V
IAS
0.01Ω
FIGURE 1. UNCLAMPED ENERGY TEST CIRCUIT
BVDSS
tp
VDS
IAS
VDD
0
tAV
FIGURE 2. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
DUT
VGS
FIGURE 3. SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-047,C
UF840
MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
t DLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
50%
50%
PULSE WIDTH
10%
FIGURE 4. RESISTIVE SWITCHING WAVEFORMS
VDS (ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
0.2μF
SAME TYPE
AS DUT
50KΩ
0.3μF
D
DUT
G
IG (REF)
S
0
VDS
IG CURRENT
SAMPLING
RESISTOR
ID CURRENT
SAMPLING
RESISTOR
FIGURE 5. GATE CHARGE TEST CIRCUIT
VDD
QG(TOT)
VGS
QGD
QGS
VDS
0
IG(REF)
0
FIGURE 6. GATE CHARGE WAVEFORMS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-047,C
UF840
MOSFET
TYPICAL CHARACTERISTICS
Figure 8. Maximum ContionuousDrain Current
vs. Case Temperature
Figure 7. Normalized Power Dissipation vs. Case
Temperature
10
1.0
8
Drain Current, I D (A)
Power Dissipation Multiplier
1.2
0.8
0.6
0.4
6
4
2
0.2
0
0
150
100
50
0
25
50
Figure 9. Normalized Maximum Transient
Thermal Impedance
150
125
Figure 10. Forward Bias Safe Operating Area
100
Operation in This Region is
Limited by rDS (on)
1
10μs
0.5
10-1
Drain Current, ID (A)
Normalized Transient Thermal
Impedance, ZθJC
100
Case Temperature, TC (℃)
Case Temperature, TC (℃)
0.2
0.1
PDM
0.05
t1
0.02
t2
0.01
Notes:
Duty Factor: D=t1/t2
Peak TJ =PDM×ZθJC×RθJC +TC
10-2
Single
pulse
10-3
10-5
10-4
10-3
10-2
10-1
1
100μs
10
1ms
10ms
1
0.1
DC
T C=25℃
T J=Max Rated
Single Pulse
1
10
10
12
Drain Current, I D (A)
VGS=5.5V
6
VGS=5.0V
3
50
100
Pulse Duration=80μs
Duty Cycle = 0.5% Max
3
VGS=10V
VGS =6.0V
9
VGS=5.5V
6
VGS=5.0V
3
VGS=4.0V
VGS=4.5V
0
10
12
VGS=6.0V
9
0
15
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VGS=10V
2
Figure 12. Saturation Characteristics
Figure 11. Output Characteristics
15
10
Drain to Source Voltage, VDS (V)
Rectangular Pulse Duration, t1 (s)
Drain Current, I D (A)
75
150
200
VGS=4.0V
250
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
0
3
6
VGS=4.5V
9
12
15
Drain to Source Voltage, VDS (V)
6 of 8
QW-R502-047,C
UF840
MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Figure 14. Drain to Source on Resistance vs.
Voltage and Drain Current
Drain to Source Current, IDS (ON), (A)
100
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VDS≥50V
10
1
TJ = 150℃
T J = 25℃
0.1
0.01
0
4
2
6
8
10
Drain to Source on Resistance, rDS (ON) (Ω)
Figure 13. Transfer Characteristics
10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
8
6
VGS =10V
4
2
0
VGS=20V
0
Gate to Source Voltage, VSD (V)
1.8
1.2
0.6
20 40 60 80 100 120 140 160
Normalized Drain to Source Breakdown
Voltage
Normalized Drain to Source on
Resistance Voltage
Pulse Duration=80μs
Duty Cycle = 0.5% Max
2.4 VGS =10V, I D=4.4A
1.25
0.95
0.85
0.75
-60 -40 -20
Capacitance, C (pF)
CISS
1200
COSS
CRSS
2
5
10
2
5
102
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
20 40 60 80 100 120 140 160
Figure 18. Transconductancevs. Drain Current
Transconductance, gFS (S)
VGS =0V,
f=1MHz
CISS =CGS+CGD
CRSS=CGD
COSS≈CDS+CGD
1
0
Junction Temperature, TJ (℃)
1800
0
I D=250μA
1.05
Figure 17. Capacitance vs. Drain to Source Voltage
600
40
1.15
Junction Temperature, TJ (℃)
2400
32
Figure 16. Normalized Drain to Source Breakdown Voltage
vs. Junction Temperature
3.0
3000
24
Case Temperature, TC (℃)
Figure 15. Normalized Drain to Source on
Resistance vs. Junction Temperature
0
-60 -40 -20 0
16
8
15 Pulse Duration=80μs
Duty Cycle = 0.5% Max
12 VDS≥50V
TJ= 25℃
9
TJ= 150℃
6
3
0
0
3
6
9
12
15
Drain Current, ID (A)
7 of 8
QW-R502-047,C
UF840
MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Figure 20. Gate to Source Voltage vs.
Gate Charge
Figure 19. Source to Drain DIODE Voltage
20
Pulse Duration=80μs
Duty Cycle = 0.5% Max
Gate to Source Voltage, VGS (V)
Source to Drain Current, I SD (A)
100
10
TJ=150℃
TJ=25℃
1.0
0.1
0
0.6
0.3
0.9
1.2
Source to Drain Voltage, VSD (V)
1.5
ID=8A
16
VDS=100V
12
VDS=250V
VDS=400V
8
4
0
0
12
36
4
24
Gate Charge, QG (nC) 8
60
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-047,C