UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 FEATURES TO-220F * 8A, 500V, Low RDS(ON)(0.85Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance *Pb-free plating product number: UF840L SYMBOL D G S ORDERING INFORMATION Order Number Package Normal Lead Free Plating UF840-TA3-T UF840L-TA3-T TO-220 UF840-TF3-T UF840L-TF3-T TO-220F Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE Pin Assignment 1 2 3 G D S G D S Packing Tube Tube UF840L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn 1 of 8 QW-R502-047,C UF840 MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25℃, unless Otherwise Specified.) PARAMETER Drain to Source Voltage (TJ =25℃~125℃) Drain to Gate Voltage (RGS = 20kΩ, TJ =25℃~125℃) Gate to Source Voltage Continuous Tc = 100℃ Drain Current SYMBOL VDSS VDGR VGS ID RATINGS 500 500 ±20 8.0 5.1 UNIT V V V A A Pulsed IDM 32 A Total Power Dissipation (Ta = 25℃) 125 W PD Derating above 25℃ 1.0 W/℃ Single Pulse Avalanche Energy Rating EAS 510 mJ (VDD=50V, starting TJ =25℃, L=14mH, RG=25Ω, peak IAS = 8A) Operating Temperature Range TOPR -55 ~ +150 ℃ Storage Temperature Range TSTG -55 ~ +150 ℃ Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be functional, but does not guarantee specific performance limits. 2.Absolute maximum ratings indicate limits beyond which damage to the device may occur. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJc RATINGS 62.5 1.0 UNIT ℃/W ELECTRICAL SPECIFICATIONS (Ta =25℃, unless Otherwise Specified.) PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 16) Gate to Threshold Voltage VGS(THR) VGS = VDS, ID = 250µA On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x RDS(ON)MAX, VGS = 10V VDS = Rated BVDSS, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS=0.8xRated BVDSS,VGS=0V,TJ= 125℃ Gate to Source Leakage Current IGSS VGS = ±20V Drain to Source On Resistance RDS(ON) ID = 4.4A, VGS = 10V (Figure 14, 15) (Note 1) Forward Transconductance (Note 1) gFS VDS ≥ 50V, ID = 4.4A (Figure 18) Turn-On Delay Time tDLY(ON) VDD=250V, ID ≈ 8A, RG = 9.1Ω, RL =30Ω Rise Time tR Turn-Off Delay Time tDLY(OFF) (Note 2) Fall Time tF Total Gate Charge QG(TOT) VGS =10V, ID =8A,VDS =0.8 x Rated BVDSS IG(REF) =1.5mA (Figure 20) Gate to Source Charge QGS (Note 3) Gate to Drain “Miller” Charge QGD Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance COSS (Figure 17) Reverse - Transfer Capacitance CRSS NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 500 2 8 TYP MAX UNIT V 4 V A 25 µA 250 µA ±100 nA 0.8 4.9 7.4 15 21 50 20 42 7 22 1225 200 85 0.85 21 35 74 30 63 Ω S ns ns ns ns nC nC nC pF pF pF 2 of 8 QW-R502-047,C UF840 MOSFET INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL MIN Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance LS Measured from the source lead(6mm from header) to source bond pad Remark: Modified MOSFET symbol showing the internal devices inductances as below. TYP MAX UNIT 3.5 4.5 nH nH 7.5 nH D LD G LS S SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage TJ = 25℃, ISD = 8.0A, VGS = 0V(Figure 19) VSD (Note 1) Continuous Source to Drain Current ISD Note 2 Pulse Source to Drain Current ISDM TJ = 25℃, ISD = 8.0A, dISD/dt = 100A/µs Reverse Recovery Time tRR 210 T = 25 ℃ , I = 8.0A, dI /dt = 100A/µs Reverse Recovery Charge QRR 2 J SD SD NOTE : 1. Pulse Test: Pulse width≤300µs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. TYP MAX UNIT 475 4.6 2 V 8 32 970 8.2 A A ns µC D G S UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-047,C UF840 MOSFET TEST CIRCUITS AND WAVEFORMS VDS L VARY tp TO OBTAIN REQUIRED PEAK IAS + RG VDD VGS DUT tp 0V IAS 0.01Ω FIGURE 1. UNCLAMPED ENERGY TEST CIRCUIT BVDSS tp VDS IAS VDD 0 tAV FIGURE 2. UNCLAMPED ENERGY WAVEFORMS RL + RG VDD DUT VGS FIGURE 3. SWITCHING TIME TEST CIRCUIT UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-047,C UF840 MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) t DLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 50% 50% PULSE WIDTH 10% FIGURE 4. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2μF SAME TYPE AS DUT 50KΩ 0.3μF D DUT G IG (REF) S 0 VDS IG CURRENT SAMPLING RESISTOR ID CURRENT SAMPLING RESISTOR FIGURE 5. GATE CHARGE TEST CIRCUIT VDD QG(TOT) VGS QGD QGS VDS 0 IG(REF) 0 FIGURE 6. GATE CHARGE WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-047,C UF840 MOSFET TYPICAL CHARACTERISTICS Figure 8. Maximum ContionuousDrain Current vs. Case Temperature Figure 7. Normalized Power Dissipation vs. Case Temperature 10 1.0 8 Drain Current, I D (A) Power Dissipation Multiplier 1.2 0.8 0.6 0.4 6 4 2 0.2 0 0 150 100 50 0 25 50 Figure 9. Normalized Maximum Transient Thermal Impedance 150 125 Figure 10. Forward Bias Safe Operating Area 100 Operation in This Region is Limited by rDS (on) 1 10μs 0.5 10-1 Drain Current, ID (A) Normalized Transient Thermal Impedance, ZθJC 100 Case Temperature, TC (℃) Case Temperature, TC (℃) 0.2 0.1 PDM 0.05 t1 0.02 t2 0.01 Notes: Duty Factor: D=t1/t2 Peak TJ =PDM×ZθJC×RθJC +TC 10-2 Single pulse 10-3 10-5 10-4 10-3 10-2 10-1 1 100μs 10 1ms 10ms 1 0.1 DC T C=25℃ T J=Max Rated Single Pulse 1 10 10 12 Drain Current, I D (A) VGS=5.5V 6 VGS=5.0V 3 50 100 Pulse Duration=80μs Duty Cycle = 0.5% Max 3 VGS=10V VGS =6.0V 9 VGS=5.5V 6 VGS=5.0V 3 VGS=4.0V VGS=4.5V 0 10 12 VGS=6.0V 9 0 15 Pulse Duration=80μs Duty Cycle = 0.5% Max VGS=10V 2 Figure 12. Saturation Characteristics Figure 11. Output Characteristics 15 10 Drain to Source Voltage, VDS (V) Rectangular Pulse Duration, t1 (s) Drain Current, I D (A) 75 150 200 VGS=4.0V 250 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0 3 6 VGS=4.5V 9 12 15 Drain to Source Voltage, VDS (V) 6 of 8 QW-R502-047,C UF840 MOSFET TYPICAL CHARACTERISTICS(Cont.) Figure 14. Drain to Source on Resistance vs. Voltage and Drain Current Drain to Source Current, IDS (ON), (A) 100 Pulse Duration=80μs Duty Cycle = 0.5% Max VDS≥50V 10 1 TJ = 150℃ T J = 25℃ 0.1 0.01 0 4 2 6 8 10 Drain to Source on Resistance, rDS (ON) (Ω) Figure 13. Transfer Characteristics 10 Pulse Duration=80μs Duty Cycle = 0.5% Max 8 6 VGS =10V 4 2 0 VGS=20V 0 Gate to Source Voltage, VSD (V) 1.8 1.2 0.6 20 40 60 80 100 120 140 160 Normalized Drain to Source Breakdown Voltage Normalized Drain to Source on Resistance Voltage Pulse Duration=80μs Duty Cycle = 0.5% Max 2.4 VGS =10V, I D=4.4A 1.25 0.95 0.85 0.75 -60 -40 -20 Capacitance, C (pF) CISS 1200 COSS CRSS 2 5 10 2 5 102 Drain to Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 20 40 60 80 100 120 140 160 Figure 18. Transconductancevs. Drain Current Transconductance, gFS (S) VGS =0V, f=1MHz CISS =CGS+CGD CRSS=CGD COSS≈CDS+CGD 1 0 Junction Temperature, TJ (℃) 1800 0 I D=250μA 1.05 Figure 17. Capacitance vs. Drain to Source Voltage 600 40 1.15 Junction Temperature, TJ (℃) 2400 32 Figure 16. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 3.0 3000 24 Case Temperature, TC (℃) Figure 15. Normalized Drain to Source on Resistance vs. Junction Temperature 0 -60 -40 -20 0 16 8 15 Pulse Duration=80μs Duty Cycle = 0.5% Max 12 VDS≥50V TJ= 25℃ 9 TJ= 150℃ 6 3 0 0 3 6 9 12 15 Drain Current, ID (A) 7 of 8 QW-R502-047,C UF840 MOSFET TYPICAL CHARACTERISTICS(Cont.) Figure 20. Gate to Source Voltage vs. Gate Charge Figure 19. Source to Drain DIODE Voltage 20 Pulse Duration=80μs Duty Cycle = 0.5% Max Gate to Source Voltage, VGS (V) Source to Drain Current, I SD (A) 100 10 TJ=150℃ TJ=25℃ 1.0 0.1 0 0.6 0.3 0.9 1.2 Source to Drain Voltage, VSD (V) 1.5 ID=8A 16 VDS=100V 12 VDS=250V VDS=400V 8 4 0 0 12 36 4 24 Gate Charge, QG (nC) 8 60 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-047,C