P12N6 5 WF WFP N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 650 V Continuous Drain Current(@Tc=25℃) 12 A ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR dv/dt A (Note1) A ±30 V (Note 2) 990 mJ Repetitive Avalanche Energy (Note 1) 22 mJ Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Total Power Dissipation(@Tc=25℃) 178 W Derating Factor above 25℃ 1.43 W/℃ -55~150 ℃ 300 ℃ PD TJ, Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 0.70 ℃/W RQCS Thermal Resistance, Case-to-Sink - - - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. P12N6 5 WF WFP N65 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 650 V, VGS = 0 V - - 10 μA VDS = 480 V, Tc = 125℃ - - 100 μA IDSS V(BR)DSS ID = 250 μA, VGS = 0 V 650 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 6A - 0.64 0.8 Ω Forward Transconductance gfs VDS = 50 V, ID = 6A - 6.4 - S Input capacitance Ciss VDS = 25 V, - 1830 - Reverse transfer capacitance Crss VGS = 0 V, - 155 - Output capacitance Coss f = 1 MHz - 2.0 - VDD =325 V, - 50 - ton ID =12A - 49 - tf RG=25 Ω - 310 - - 54 - - 51.7 - - 9.6 - - 18.6 - Rise time Turn−on time tr pF Switching time ns Fall time Turn−off time (Note4,5) toff Total gate charge (gate−source VDD = 520 V, Qg plus gate−drain) VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 12 A (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Un it Continuous drain reverse current IDR - - - 12 A Pulse drain reverse current IDRP - - - 48 A Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 12 A, VGS = 0 V, - 450 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 5.0 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25Ω,Starting TJ=25℃ 3.ISD≤12A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance P12N6 5 WF WFP N65 Fig.1 On-State Characteristics Fig.3 On-Resistance variation vs Drain Current Fig.8 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Current Characteristics Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance P12N6 5 WF WFP N65 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance P12N6 5 WF WFP N65 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance P12N6 5 WF WFP N65 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance P12N6 5 WF WFP N65 TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance