UNISONIC TECHNOLOGIES CO., LTD 30N06-Q 60V, 30A N-CHANNEL POWER MOSFET Power MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. FEATURES * RDS(ON) = 40mΩ@VGS = 10 V, ID=15A * Ultra low gate charge ( typical 20nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 30N06L-TA3-T 30N06G-TA3-T TO-220 30N06L-TF1-T 30N06G-TF1-T TO-220F1 30N06L-TF2-T 30N06G-TF2-T TO-220F2 30N06L-TF3-T 30N06G-TF3-T TO-220F 30N06L-TM3-T 30N06G-TM3-T TO-251 30N06L-TN3-T 30N06G-TN3-T TO-252 30N06L-TN3-R 30N06G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 1 TO-220F1 TO-220F2 1 1 TO- 252 TO-251 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel 1 of 8 QW-R502-979. A 30N06-Q Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V TC = 25°C 30 A Continuous Drain Current ID TC = 100°C 21.3 A Pulsed Drain Current (Note 2) IDM 120 A 250 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 8 mJ TO-220 79 TO-220F/ TO-220F2 45 Power Dissipation PD W TO-220F1 TO-251/TO-252 46 Junction Temperature TJ +150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C THERMAL DATA PARAMETER TO-220 TO-220F/ TO-220F2 Junction to Ambient TO-220F1 TO-251/TO-252 TO-220 TO-220F/ TO-220F2 Junction to Case TO-220F1 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATING 62 UNIT θJA 62.5 °C/W 110 1.9 θJC 2.7 °C/W 2.85 2 of 8 QW-R502-979. A 30N06-Q Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 60 V VDS = 60 V, VGS = 0 V 10 μA 100 nA Forward VGS = 20V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0 V -100 nA ID =250μA, 0.06 V/°C Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 26 40 mΩ DYNAMIC CHARACTERISTICS 900 pF Input Capacitance CISS VGS = 0 V, VDS = 25 V, Output Capacitance COSS 250 pF f = 1MHz Reverse Transfer Capacitance CRSS 85 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 ns Turn-On Rise Time tR 100 ns VDD = 30V, ID =15 A, VGS=10V (Note 1, 2) Turn-Off Delay Time tD(OFF) 160 ns Turn-Off Fall Time tF 100 ns Total Gate Charge QG 20 30 nC VDS = 60V, VGS = 10 V, Gate-Source Charge QGS 6 nC ID = 24A (Note 1, 2) Gate-Drain Charge QGD 9 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode IS 30 A Forward Current Maximum Pulsed Drain-Source Diode ISM 120 A Forward Current Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-979. A 30N06-Q Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-979. A 30N06-Q Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA VG Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-979. A 30N06-Q TYPICAL CHARACTERISTICS Transfer Characteristics On-State Characteristics VGS Top: 15V 10V 8V 7V 102 6V 5.5V 5V Bottorm: 4.5V 102 4.5V 101 101 Note: 1. VDS=25V 2. 20µs Pulse Test 100 10-1 101 100 Drain-Source Voltage, VDS (V) 100 2 4 5 6 7 8 9 10 3 Gate-Source Voltage, VGS (V) Reverse Drain Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage 100 102 80 60 150℃ VGS=10V 101 40 VGS=20V 0.0 0 20 40 60 80 25℃ *Note: 1. VGS=0V 2. 250µs Test 20 100 120 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, VSD (V) Gate-to-Source Voltage, VGS (V) Drain Current, ID (A) Capacitance (pF) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-979. A 30N06-Q Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Power MOSFET Maximum Safe Operating 30 100 Operation in This Area by RDS (ON) 100µs 10 10ms Note: 1. TC=25℃ 2. TJ=150℃ 3. Single Pulse 0.1 1 20 1ms DC 1 Maximum Drain Current vs. Case Temperature 10 100 1000 Drain-Source Voltage, VDS (V) 10 0 25 50 75 100 125 150 Case Temperature, TC (℃) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJ -TC=PDM×ZθJC (t) 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-979. A 30N06-Q Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-979. A