Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT4850
Preliminary
Power MOSFET
N-CHANNEL POWER MOSFET
DESCRIPTION

The UTC UTT4850 is an N-channel, it uses UTC’s advanced
technology to provide the customers with a minimum on state
resistance and high switching speed.
FEATURES

SOP-8
*RDS(ON)< 25mΩ @ VGS=10V, ID=6.0A
RDS(ON)< 31mΩ @ VGS=4.5V, ID=5.1A
* High switching speed
SYMBOL

D
G
S

ORDERING INFORMATION
Ordering Number
Note:

UTT4850G-S08-R
Pin Assignment: G: Gate
Package
D: Drain
SOP-8
S: Source
1
S
2
S
Pin Assignment
3 4 5 6 7
S G D D D
8
D
Packing
Tape Reel
MARKING
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UTT4850

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=175°C) (Note 1)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
RATINGS
UNIT
60
V
±20
V
6.0
A
TA=25°C
ID
TA=70°C
5.0
A
IDM
24
A
IAS
6
A
EAS
120
mJ
TA=25°C
1.7
W
PD
Power Dissipation (Note 1)
TA=70°C
1.2
W
Junction Temperature
TJ
-50~+150
°C
Storage Temperature Range
TSTG
-50~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=6.66mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note)
Note: Surface Mounted on 1” x 1” FR4 Board.

SYMBOL
θJA
RATINGS
75
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
BVDSS
IDSS
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=55°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
On State Drain Current (Note 1)
ID(ON)
VDS=2V, VGS=10V
VGS=10V, ID=6.0A
Static Drain-Source On-State Resistance
RDS(ON)
(Note 1)
VGS=4.5V, ID=5.1A
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
CISS
VDS=25V,VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0.1V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID≈0.5A, VGS=10V,
RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=10V, VDS=50V, ID=1.3A
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note 1)
VSD
IS=1.7A,VGS=0V
Notes: 1. Pulse test; pulse width≤300µs, duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
MIN
TYP
MAX UNIT
60
1
20
+100
-100
1
40
2.5
20
22
0.5
25
31
V
µA
µA
nA
nA
V
A
mΩ
mΩ
2500 2700
185 200
150 170
1.4
2.4
pF
pF
pF
Ω
70
80
750
165
70
8
13
90
100
800
200
100
ns
ns
ns
ns
nC
nC
nC
0.8
1.2
V
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QW-R209-032.a
UTT4850
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
Power MOSFET
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QR-R209-032.a
UTT4850
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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