UNISONIC TECHNOLOGIES CO., LTD UTT6N10 Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10 is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10 is usually used in DC-DC Conversion. 1 SOT-223 FEATURES * RDS(on) < 200mΩ @ VGS = 10 V, ID=3A * High Switching Speed SYMBOL D (2) G (1) S (3) ORDERING INFORMATION Ordering Number Note: UTT6N10G-AA3-R Pin Assignment: G: Gate D: Drain Package SOT-223 Pin Assignment 1 2 3 G D S Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-779.D UTT6N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous ID 6 A Drain Current Pulsed IDM 24 A Single Pulsed Avalanche Energy (Note 3) EAS 12 mJ Power Dissipation TA=25°C (Note 1) PD 0.8 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 1) Junction to Case SYMBOL θJA θJC RATINGS 150 12 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 100 VDS=VGS, ID=250µA VGS=10V, ID=3A VGS=4.5V, ID=1A 1.0 145 155 1 +100 -100 V µA nA nA 3.0 200 225 V mΩ mΩ DYNAMIC PARAMETERS Input Capacitance CISS 700 900 pF VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 42 60 pF Reverse Transfer Capacitance CRSS 10 15 pF SWITCHING PARAMETERS Total Gate Charge QG 23 nC VGS=10V, VDD=50V, ID=1.3A Gate to Source Charge QGS 36 nC IG=100µA Gate to Drain Charge QGD 5 nC Turn-ON Delay Time tD(ON) 32 ns Rise Time tR 28 ns VDD=30V, ID=0.5A, VGS=10V, RGEN=25Ω Turn-OFF Delay Time tD(OFF) 220 ns Fall-Time tF 41 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS ssDrain-Source Diode Forward Voltage VSD IS=3.2A, VGS=0V (Note 2) 0.86 1.3 V Maximum Body-Diode Continuous Current IS 6 A Source Current Pulsed ISM 24 A Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-779.D UTT6N10 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 100 0 0 Drain-Source On-State Resistance Characteristics 3.6 3.0 VGS=10V, ID=3A 2.4 1.8 1.2 0.6 0 0.2 0.3 0.4 0.5 0.6 0.7 Drain to Source Voltage, VDS (V) Coutinuous Drain-Soarce Current, ISD (A) 0 25 75 100 125 50 Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) 150 50 0 0 200 3.6 0.4 0.8 1.2 1.6 2.0 2.4 Gate Threshold Voltage, VTH (V) Coutinuous Drain-Soarce Current vs. Source to Drain Voltage 3.0 2.4 1.8 1.2 0.6 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-779.D