UNISONIC TECHNOLOGIES CO., LTD UF830K-MT Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.5 A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830KL-TA3-T UF830KG-TA3-T UF830KL-TF3-T UF830KG-TF3-T UF830KL-TF1-T UF830KG-TF1-T UF830KL-TF2-T UF830KG-TF2-T UF830KL-TF3T-T UF830KG-TF3T-T UF830KL-TM3-T UF830KG-TM3-T UF830KL-TMS-T UF830KG-TMS-T UF830KL-TMS2-T UF830KG-TMS2-T UF830KL-TMS4-T UF830KG-TMS4-T UF830KL-TN3-R UF830KG-TN3-R UF830KL-TND-R UF830KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel 1 of 7 QW-R209-030.E UF830K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-030.E UF830K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Continuous ID 4.5 A Drain Current Pulsed IDM 18 A Avalanche Current (Note 2) IAR 5.0 A Single Pulsed Avalanche Single Pulsed (Note 3) EAS 125 mJ Energy Peak Diode Recovery dv/dt (Note 4) dv/dt 3.9 V/ns TO-220 73 W TO-220F/TO-220F1 38 W TO-220F3 PD Power Dissipation (TC = 25°C) TO-220F2 40 W TO-251/TO-251S TO-251S2/ TO-251S4 46 W TO-252/TO-252D Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 5.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C. 4. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C. THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 Junction to Ambient TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/ TO-251S4 TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 °C/W 100.3 °C/W 1.71 °C/W 3.31 °C/W 3.125 °C/W 2.7 °C/W θJA θJC 3 of 7 QW-R209-030.E UF830K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 2.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, ID=1.3A, IG=100μA Gate to Source Charge QGS VGS=10V (Note 1,2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) Rise Time tR VDD =30V, ID =0.5A, RG =25Ω, VGS=10V (Note 1,2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=4.5A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=4.5A, VGS=0V, dIF/dt=100A/μs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 2.0 25 100 -100 V μA nA nA 4.0 1.5 V Ω 420 66 6.5 pF pF pF 48 48 42 44 13.8 5.4 6.0 nC nC nC nS nS nS nS 5.5 18 1.6 290 1.8 A A V nS μC 4 of 7 QW-R209-030.E UF830K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS L Vary tP to Obtain Required Peak IAS + RG VDD VGS DUT 0V tp IAS 0.01Ω Unclamped Energy Test Circuit Unclamped Energy Waveforms RL + RG VDD DUT VGS Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-030.E UF830K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 50% 10% PULSE WIDTH 50% Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R209-030.E UF830K-MT Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) Drain Current, ID (µA) Drain-Source On-State Resistance Characteristics 7 Continuous Source to Drain Current, ISD (A) Drain Current, ID (A) 4 3 2 1 0 0 1 2 3 4 Drain to Source Voltage, VDS (V) 5 Continuous Source to Drain Current vs. Source to Drain Voltage 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-030.E