UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 1 TO-220F FEATURES * RDS(ON)<1.5Ω @ ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance TO-220 1 TO-220F2 SYMBOL 1 TO-252 ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UF830KL-TA3-T UF830KG-TA3-T TO-220 UF830KL-TF3-T UF830KG-TF3-T TO-220F UF830KL-TF2-T UF830KG-TF2-T TO-220F2 UF830KL-TN3-R UF830KG-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel MARKING INFORMATION PACKAGE MARKING TO-220 TO-220F TO-220F2 TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A77.b UF830K Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Continuous ID 4.5 A Drain Current Pulsed IDM 18 A 73 W TO-220 TO-220F 38 W Power Dissipation PD (TC = 25°C) TO-220F2 40 W TO-252 50 Single Pulse Avalanche Energy Rating (Note 2) EAS 300 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A THERMAL DATA PARAMETER TO-220/TO-220F TO-220F2 Junction to Ambient TO-252 TO-220 TO-220F Junction to Case TO-220F2 TO-252 SYMBOL θJA θJc RATINGS UNIT 62.5 °C/W 110 1.71 3.31 3.125 2.5 °C/W °C/W ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Current (Note 1) SYMBOL TEST CONDITIONS MIN BVDSS ID=250μA, VGS=0V 500 VGS(TH) VGS=VDS, ID=250μA 2.0 ID(ON) VDS>ID(ON)×RDS(ON)MAX, VGS=10V 4.5 VDS= Rated BVDSS, VGS=0V Drain-Source Leakage Current IDSS VDS=0.8×Rated BVDSS VGS=0V, TJ= 125°C Gate-Source Leakage Current IGSS VGS=±30V Static Drain-Source On-State Resistance RDS(ON) ID=2.5A, VGS=10V (Note 2) Forward Transconductance (Note 1) gFS VDS≥10V, ID=2.7A 2.5 Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=30V, ID≈0.5A RGS=12Ω, RL =54Ω (Note 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VGS=10V, ID=1.3A VDS=50V Gate-Source Charge QGS IG(REF)=100μA (Note 3) Gate-Drain Charge QGD Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V 4.0 V A 25 μA 1.23 4.2 48 48 40 44 14 5.4 6 590 80 15 250 μA ±100 1.5 nA Ω S ns ns ns ns nC nC nC pF pF pF 60 60 53 60 32 2 of 6 QW-R502-A77.b UF830K Preliminary INTERNAL PACKAGE INDUCTANCE PARAMETER SYMBOL Internal Drain Inductance Measured from the contact screw on tab to center of die LD Measured from the drain lead(6mm from package) to center of die Internal Source Inductance Measured from the source lead(6mm from header) to source bond pad LS Remark: Modified MOSFET symbol showing the internal devices inductances as below. Power MOSFET MIN TYP MAX UNIT 3.5 4.5 nH nH 7.5 nH SOURCE TO DRAIN DIODE SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN Source to Drain Diode Voltage VSD TJ=25°C,ISD=4.5A, VGS=0V(Note 1) Continuous Source to Drain Current ISD (Note 2) Pulse Source to Drain Current ISDM Reverse Recovery Time trr TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180 Reverse Recovery Charge QRR TJ=25°C, ISD=4.5A, dI/dt=100A/μs 0.96 Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP 350 2.2 MAX UNIT 1.6 V 5.5 A 18 A 760 ns 4.3 μC 3 of 6 QW-R502-A77.b UF830K Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS L Vary tP to Obtain Required Peak IAS + RG VDD VGS DUT 0V tp IAS 0.01Ω Unclamped Energy Test Circuit Unclamped Energy Waveforms RL + RG VDD DUT VGS Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A77.b UF830K Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) tON tOFF tDLY(ON) tDLY(OFF) tR VDS tF 90% 90% 10% 0 10% 90% VGS 0 50% 10% PULSE WIDTH 50% Resistive Switching Waveforms Gate Charge Test Circuit Gate Charge Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-A77.b UF830K Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A77.b